{"title":"Simple evaluation of very low currents in process characterization","authors":"P. Girard, P. Nouet, F. M. Roche","doi":"10.1109/ICMTS.1990.161719","DOIUrl":null,"url":null,"abstract":"A test structure dedicated to the evaluation of very low currents for MOS process characterization is presented. The device consists of an amplifier plus a bias voltage set implemented on the chip and connected to the leaky element. The principle is given, and SPICE simulations, based on 2- mu m CMOS industrial technology, show the structure response. Owing to this structure, a strong current amplification is obtained. Consequently, only a classical transistor parameter analyzer is required to evaluate currents in the fA range.<<ETX>>","PeriodicalId":417292,"journal":{"name":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1991 International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.161719","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A test structure dedicated to the evaluation of very low currents for MOS process characterization is presented. The device consists of an amplifier plus a bias voltage set implemented on the chip and connected to the leaky element. The principle is given, and SPICE simulations, based on 2- mu m CMOS industrial technology, show the structure response. Owing to this structure, a strong current amplification is obtained. Consequently, only a classical transistor parameter analyzer is required to evaluate currents in the fA range.<>
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