F. Jiménez-Molinos, H. García, M. González, S. Dueñas, H. Castán, E. Miranda, F. Campabadal, J. Roldán
{"title":"Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge","authors":"F. Jiménez-Molinos, H. García, M. González, S. Dueñas, H. Castán, E. Miranda, F. Campabadal, J. Roldán","doi":"10.1109/CDE52135.2021.9455756","DOIUrl":null,"url":null,"abstract":"Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 13th Spanish Conference on Electron Devices (CDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CDE52135.2021.9455756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimental data.
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