Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455747
Álvaro Peña, D. Matatagui, C. Cruz, P. de la Presa, P. Marín, Carmen Horrillo
In this work, the magnetoelastic resonance behaviour has been studied in amorphous metallic ribbons and microwires using a custom-made setup. First, optimal setup conditions were determined for both devices, then the frequency shift dependence on polymer mass deposition was studied. Both devices show a predictable response to the mass deposition of the polymer tested, making them suitable for contactless chemical sensors.
{"title":"Study of magnetoelastic resonance for chemical sensors: Ribbons vs microwires","authors":"Álvaro Peña, D. Matatagui, C. Cruz, P. de la Presa, P. Marín, Carmen Horrillo","doi":"10.1109/CDE52135.2021.9455747","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455747","url":null,"abstract":"In this work, the magnetoelastic resonance behaviour has been studied in amorphous metallic ribbons and microwires using a custom-made setup. First, optimal setup conditions were determined for both devices, then the frequency shift dependence on polymer mass deposition was studied. Both devices show a predictable response to the mass deposition of the polymer tested, making them suitable for contactless chemical sensors.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114984833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455722
A. Pacheco-Sánchez, N. Mavredakis, P. C. Feijoo, D. Jiménez
The effect of traps on DC and high-frequency behavior of a short channel single-layer graphene field-effect transistor (GFET) is discussed thoroughly in the present work. Trap-induced hysteresis is evident when a standard staircase measurement technique is applied while it is diminished when an opposing-pulse method is used. In both cases, forward and backward gate voltage (VGS) sweeps are utilized. A recently proposed analytical compact model accounting for traps activated both by vertical electric field and high-lateral electric field enabled by hot carriers, is accurately validated with both trap-affected and trap-reduced data. Important high-frequency figures of merit (FoM) such as cut-off and maximum oscillation frequencies as well as the intrinsic gain of the GFET under test, are also derived from the model, and exhibit a strong trap dependence through the DC operating point of the device. These FoM not only demonstrate VGS shifts, but also, they exhibit magnitude alterations due to traps impact even when the Dirac voltage of the GFET under test coincides in both forward and backward staircase measurement schemes.
{"title":"Analysis of traps-related effects hindering GFETs performance","authors":"A. Pacheco-Sánchez, N. Mavredakis, P. C. Feijoo, D. Jiménez","doi":"10.1109/CDE52135.2021.9455722","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455722","url":null,"abstract":"The effect of traps on DC and high-frequency behavior of a short channel single-layer graphene field-effect transistor (GFET) is discussed thoroughly in the present work. Trap-induced hysteresis is evident when a standard staircase measurement technique is applied while it is diminished when an opposing-pulse method is used. In both cases, forward and backward gate voltage (VGS) sweeps are utilized. A recently proposed analytical compact model accounting for traps activated both by vertical electric field and high-lateral electric field enabled by hot carriers, is accurately validated with both trap-affected and trap-reduced data. Important high-frequency figures of merit (FoM) such as cut-off and maximum oscillation frequencies as well as the intrinsic gain of the GFET under test, are also derived from the model, and exhibit a strong trap dependence through the DC operating point of the device. These FoM not only demonstrate VGS shifts, but also, they exhibit magnitude alterations due to traps impact even when the Dirac voltage of the GFET under test coincides in both forward and backward staircase measurement schemes.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114922280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455743
R. Barrio, D. Canteli, N. González, I. Torres, A. Márquez, C. Molpeceres, J. J. Gandía
Laser-based surface texturing treatments have been investigated as a promising option for innovative low-cost concepts to improve the light absorption of silicon heterojunction solar cells manufactured from unconventional silicon wafers. A great advantage of using a laser as a processing tool is its high precision, which lead to selected and well-controlled morphologies. This is a particularly interesting feature for multicrystalline silicon wafers, where the large number of grain boundaries makes it difficult to obtain high light-trapping morphologies by other methods. The investigations described in this work include testing different patterns on the wafer surface in order to define the best morphology to improve the light absorption. A significant decrease in reflectance (R<9%) has been achieved by direct-laser texturization and has been compared with acid-chemical etching with average reflectance above 20%. This result suggests the enormous potential of direct laser texturization for this type of wafers, without chemical residues and its easy incorporation to the manufacturing of low-cost silicon heterojunction solar cells.
{"title":"Light-trapping improvement of limited-quality silicon wafers for silicon heterojunction solar cell applications","authors":"R. Barrio, D. Canteli, N. González, I. Torres, A. Márquez, C. Molpeceres, J. J. Gandía","doi":"10.1109/CDE52135.2021.9455743","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455743","url":null,"abstract":"Laser-based surface texturing treatments have been investigated as a promising option for innovative low-cost concepts to improve the light absorption of silicon heterojunction solar cells manufactured from unconventional silicon wafers. A great advantage of using a laser as a processing tool is its high precision, which lead to selected and well-controlled morphologies. This is a particularly interesting feature for multicrystalline silicon wafers, where the large number of grain boundaries makes it difficult to obtain high light-trapping morphologies by other methods. The investigations described in this work include testing different patterns on the wafer surface in order to define the best morphology to improve the light absorption. A significant decrease in reflectance (R<9%) has been achieved by direct-laser texturization and has been compared with acid-chemical etching with average reflectance above 20%. This result suggests the enormous potential of direct laser texturization for this type of wafers, without chemical residues and its easy incorporation to the manufacturing of low-cost silicon heterojunction solar cells.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117318385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455752
A. Doblas, W. Khalid, D. Flores, S. Hidalgo, G. Pellegrini, M. Valentan
In this work, we present the pLGAD concept, which is based on the LGAD technology developed at IMB-CNM. We describe the main characteristics of this novel detector suitable for low energy particles detection. Using 2D TCAD numerical simulations we optimize its multiplication region characteristics, the VBD-Gain trade-off and the periphery design. Also, we define a first pLGAD fabrication run to integrate it at IMB-CNM clean room. Moreover, we describe the first n-type LGAD prototype.
{"title":"Proton Low Gain Avalanche Detector (pLGAD) for Low Energy Particles Detection","authors":"A. Doblas, W. Khalid, D. Flores, S. Hidalgo, G. Pellegrini, M. Valentan","doi":"10.1109/CDE52135.2021.9455752","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455752","url":null,"abstract":"In this work, we present the pLGAD concept, which is based on the LGAD technology developed at IMB-CNM. We describe the main characteristics of this novel detector suitable for low energy particles detection. Using 2D TCAD numerical simulations we optimize its multiplication region characteristics, the VBD-Gain trade-off and the periphery design. Also, we define a first pLGAD fabrication run to integrate it at IMB-CNM clean room. Moreover, we describe the first n-type LGAD prototype.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132063012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455749
A. Alcacer, Hamdi Ben Halima, Marie Hangouet, Hamid Elaissari, A. Errachid, J. Bausells
Heart failure is a chronic condition that sorely affects the worldwide population with huge health and economic costs. The purpose of this research is to present an ISFET-based immunosensor sensible to low concentrations of TNF-α biomarker in saliva, a protein related with the severity state of heart failure patients, together with a proof-of-concept IoT-based user-centered health ecosystem, aiming to reduce hospital-centered associated costs and improving patient monitoring. The immunosensor presents a low limit of detection of 5pg/mL, with good cross-selectivity versus other saliva biomarkers, using a low cost and short run-time detection technique, optimal for its implementation in a distributed monitoring system.
{"title":"eHealth system with ISFET-based immunosensor for heart failure biomarker detection in saliva","authors":"A. Alcacer, Hamdi Ben Halima, Marie Hangouet, Hamid Elaissari, A. Errachid, J. Bausells","doi":"10.1109/CDE52135.2021.9455749","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455749","url":null,"abstract":"Heart failure is a chronic condition that sorely affects the worldwide population with huge health and economic costs. The purpose of this research is to present an ISFET-based immunosensor sensible to low concentrations of TNF-α biomarker in saliva, a protein related with the severity state of heart failure patients, together with a proof-of-concept IoT-based user-centered health ecosystem, aiming to reduce hospital-centered associated costs and improving patient monitoring. The immunosensor presents a low limit of detection of 5pg/mL, with good cross-selectivity versus other saliva biomarkers, using a low cost and short run-time detection technique, optimal for its implementation in a distributed monitoring system.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134067186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455732
M. M. Al Chawa, R. Tetzlaff, S. Stavrinides, C. de Benito, R. Picos
In this work, an energy-based analysis has been performed for the reset transition of Resistive switching RAM (ReRAM) memristive devices. A voltage ramp input with different slopes has been considered and assumed that these ramps are slower than the physical mechanisms inside the memristor. The analysis has been done in the flux-charge space, instead of the usual voltage-current one. The effects of changing the slope on the reset point have been shown, and a method to estimate the new parameters has been introduced, assuming that the important parameters are those that describe the process in the flux-charge space more than those in the voltage-current domain. In any case, it has been shown that the total energy up to the reset point is dependent on the input ramp, thus strongly hinting at a thermally driven degradation mechanism, as with a slower input signal more energy will be dissipated to the ambient.
{"title":"Energy Based Analysis of ReRAM Reset Transition Memristive Devices","authors":"M. M. Al Chawa, R. Tetzlaff, S. Stavrinides, C. de Benito, R. Picos","doi":"10.1109/CDE52135.2021.9455732","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455732","url":null,"abstract":"In this work, an energy-based analysis has been performed for the reset transition of Resistive switching RAM (ReRAM) memristive devices. A voltage ramp input with different slopes has been considered and assumed that these ramps are slower than the physical mechanisms inside the memristor. The analysis has been done in the flux-charge space, instead of the usual voltage-current one. The effects of changing the slope on the reset point have been shown, and a method to estimate the new parameters has been introduced, assuming that the important parameters are those that describe the process in the flux-charge space more than those in the voltage-current domain. In any case, it has been shown that the total energy up to the reset point is dependent on the input ramp, thus strongly hinting at a thermally driven degradation mechanism, as with a slower input signal more energy will be dissipated to the ambient.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125653105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455718
I. Sayago, C. Sánchez-Vicente, J. Sanjurjo, J.P. Santos, S. Ogilvie, H. J. Wood, A. A. Graf, M. Large, A. Dalton, R. Garriga, E. Muñoz
This work reports on two-dimensional MoS2 nanomaterial-based resistive gas sensors and their response to sub-ppm NO2 concentrations. The sensitive material was prepared by drop-casting MoS2 nanosheet dispersions on silicon nitride suspended membranes. The sensor response was studied at operating temperatures up to 300 °C. The fabricated sensors provided good responses to NO2 concentrations as low as 20 ppb at room temperature. The n-type MoS2 sensing mechanism is here discussed.
{"title":"Resistive gas sensors based on MoS2 nanosheets with high response to low NO2 concentrations","authors":"I. Sayago, C. Sánchez-Vicente, J. Sanjurjo, J.P. Santos, S. Ogilvie, H. J. Wood, A. A. Graf, M. Large, A. Dalton, R. Garriga, E. Muñoz","doi":"10.1109/CDE52135.2021.9455718","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455718","url":null,"abstract":"This work reports on two-dimensional MoS<inf>2</inf> nanomaterial-based resistive gas sensors and their response to sub-ppm NO<inf>2</inf> concentrations. The sensitive material was prepared by drop-casting MoS<inf>2</inf> nanosheet dispersions on silicon nitride suspended membranes. The sensor response was studied at operating temperatures up to 300 °C. The fabricated sensors provided good responses to NO<inf>2</inf> concentrations as low as 20 ppb at room temperature. The n-type MoS<inf>2</inf> sensing mechanism is here discussed.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127881281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455726
M. Tomić, I. Gràcia, E. Figueras, C. Cané, S. Vallejos
Aerosol assisted chemical vapour deposited ZnO nanostructured films integrated into Si-based transducing platforms are modified with preformed Au nanoparticles (NPs) via impregnation. The morphological, structural, and chemical characterization of these films using different characterisation techniques shows the incorporation of well-distributed and stable Au nanoparticles (NPs) at the surface of ZnO. Photoactivated gas sensing tests at room temperature (RT) demonstrate enhanced sensitivity and better speed of response for the Au modified ZnO films (AuZn) providing 3 times higher response to ethanol and acetone as compared to the non-modified ZnO films (Zn).
{"title":"ZnO Nanorods and Their Modification with Au Nanoparticles for UV-light Activated Gas Sensing","authors":"M. Tomić, I. Gràcia, E. Figueras, C. Cané, S. Vallejos","doi":"10.1109/CDE52135.2021.9455726","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455726","url":null,"abstract":"Aerosol assisted chemical vapour deposited ZnO nanostructured films integrated into Si-based transducing platforms are modified with preformed Au nanoparticles (NPs) via impregnation. The morphological, structural, and chemical characterization of these films using different characterisation techniques shows the incorporation of well-distributed and stable Au nanoparticles (NPs) at the surface of ZnO. Photoactivated gas sensing tests at room temperature (RT) demonstrate enhanced sensitivity and better speed of response for the Au modified ZnO films (AuZn) providing 3 times higher response to ethanol and acetone as compared to the non-modified ZnO films (Zn).","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126463011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455737
E. Pérez-Martín, I. Íñiguez-de-la-Torre, T. González, C. Gaquière, J. Mateos
In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary.
{"title":"Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes","authors":"E. Pérez-Martín, I. Íñiguez-de-la-Torre, T. González, C. Gaquière, J. Mateos","doi":"10.1109/CDE52135.2021.9455737","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455737","url":null,"abstract":"In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122497928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-06-09DOI: 10.1109/CDE52135.2021.9455742
R. Barrio, D. Canteli, I. Torres, S. Fernández, Marina de la Cruz, C. Molpeceres, J. J. Gandía
The roadmap for the development of silicon solar cells requires the introduction of passivating contacts to obtain higher efficiencies as well as to reduce the cost of production to be industrially implemented. In this context, Laser Fired Contact (LFC) on p-type silicon wafers have been shown to be an effective technique to improve efficiencies, due to their ability to reduce recombination losses on the back surface of crystalline silicon solar cells. These studies have mainly focused on high quality monocrystalline silicon wafers and there are not enough developments made with multicrystalline silicon (mc-Si) wafers. Therefore, in this work, we present the optimization of the LFC process on p-type mc-Si and its application to two types of silicon devices: diffusion and heterojunction solar cells. These rear contacts have led to improved efficiencies for both types of solar cells over similar devices with thermalized aluminum rear contacts and without back passivation. These results illustrate the enormous potential of these localized laser-contacts created for mc-Si solar cells, perfectly compatible with a lower cost industrial production.
{"title":"Laser Fired Contacts in multicrytalline silicon solar cells","authors":"R. Barrio, D. Canteli, I. Torres, S. Fernández, Marina de la Cruz, C. Molpeceres, J. J. Gandía","doi":"10.1109/CDE52135.2021.9455742","DOIUrl":"https://doi.org/10.1109/CDE52135.2021.9455742","url":null,"abstract":"The roadmap for the development of silicon solar cells requires the introduction of passivating contacts to obtain higher efficiencies as well as to reduce the cost of production to be industrially implemented. In this context, Laser Fired Contact (LFC) on p-type silicon wafers have been shown to be an effective technique to improve efficiencies, due to their ability to reduce recombination losses on the back surface of crystalline silicon solar cells. These studies have mainly focused on high quality monocrystalline silicon wafers and there are not enough developments made with multicrystalline silicon (mc-Si) wafers. Therefore, in this work, we present the optimization of the LFC process on p-type mc-Si and its application to two types of silicon devices: diffusion and heterojunction solar cells. These rear contacts have led to improved efficiencies for both types of solar cells over similar devices with thermalized aluminum rear contacts and without back passivation. These results illustrate the enormous potential of these localized laser-contacts created for mc-Si solar cells, perfectly compatible with a lower cost industrial production.","PeriodicalId":267404,"journal":{"name":"2021 13th Spanish Conference on Electron Devices (CDE)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114249385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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