Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs

R. Leoni, J.C.M. Hwang
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引用次数: 15

Abstract

The gradual degradation effects of reverse gate-drain breakdown which often occurs in high-efficiency operation of power PHEMTs were studied. Similar to MESFETs, PHEMTs were founded to be susceptible to breakdown-induced trap formation in the silicon-nitride surface passivation, the figure of merit against such degradation being approximately two orders of magnitude lower for PHEMTs than for MESFETs. Thus, even if a PHEMT has the same breakdown voltage as a MESFET, the former cannot be driven with as high a drain voltage as the latter. In addition, unlike MESFETs, PHEMTs can undergo an initial power expansion before power slump, due to breakdown-induced donor activation. Therefore, care must be taken to stress PHEMTs sufficiently in order to ascertain their stability against degradation.
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反向栅极-漏极击穿对功率phemt逐渐退化的影响
研究了大功率phemt高效运行中经常出现的反向栅漏击穿的逐渐降解效应。与mesfet类似,phemt在氮化硅表面钝化过程中容易受到击穿诱导的陷阱形成的影响,phemt的性能比mesfet低大约两个数量级。因此,即使PHEMT具有与MESFET相同的击穿电压,前者也不能像后者那样用高漏极电压驱动。此外,与mesfet不同的是,由于击穿诱导的供体激活,phemt在功率下降之前可以经历初始功率膨胀。因此,必须注意充分强调phemt,以确定其抗降解的稳定性。
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Ion-implanted GaAs JFETs with f/sub t/>45 GHz for low-power electronics W-band InGaAs/InP PIN diode monolithic integrated switches A 500 MHz complementary gallium arsenide clock multiplier A 2 GHz 12-bit digital-to-analog converter for direct digital synthesis applications Breakdown effects on the performance and reliability of power MESFETs
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