F. F. Ince, A. T. Newell, K. Reilly, S. Seth, T. Rotter, A. Mansoori, S. Addamane, D. Shima, L. Miroshnik, B. Rummel, A. Li, T. Sinno, S.M. Han, G. Balakrishnan
{"title":"Growth of high Indium Percentage InGaSb on InP substrates using the interfacial misfit dislocation array growth mode","authors":"F. F. Ince, A. T. Newell, K. Reilly, S. Seth, T. Rotter, A. Mansoori, S. Addamane, D. Shima, L. Miroshnik, B. Rummel, A. Li, T. Sinno, S.M. Han, G. Balakrishnan","doi":"10.1109/CSW55288.2022.9930345","DOIUrl":null,"url":null,"abstract":"We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
