A New Design Method for Emitter Finger Space of Heterojunction Bipolar Transistors

Abstract

: A new design method for emitter finger space of multi-finger HBT was proposed to improve thermal stability of HBT. The 3-D temperature distribution, cross section temperature distribution, cross section temperature gradient distribution of five-finger power HBT with traditional emitter structure and non-uniform emitter finger space structure at the same dissipation power are given. Compared with 3-D temperature distribution and cross section temperature distribution, the difference between traditional emitter structure and non-uniform emitter finger space structure is more distinctive, so the cross-section temperature gradient distribution is more effective for the design technique of non-uniform finger spacing of multiple finger power HBT.