{"title":"Design of Dickson rectifier for RF energy harvesting in 28 nm FD-SOI technology","authors":"M. Awad, P. Benech, J. Duchamp","doi":"10.1109/ULIS.2018.8354751","DOIUrl":null,"url":null,"abstract":"In the context of the radio frequency energy harvesting, RF-DC converter based on a one stage Dickson voltage rectifier has been studied and realized in 28 nm FD-SOI technology. After the analysis of the operating constraints of the circuit, a choice was made on the N-low threshold voltage transistor (NLVT). Moreover, the back gate polarization (BGP) effect, on circuit performance, has been analyzed and a dynamic BGP is proposed which improve rectifier performance.","PeriodicalId":383788,"journal":{"name":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","volume":"53 6","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2018.8354751","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In the context of the radio frequency energy harvesting, RF-DC converter based on a one stage Dickson voltage rectifier has been studied and realized in 28 nm FD-SOI technology. After the analysis of the operating constraints of the circuit, a choice was made on the N-low threshold voltage transistor (NLVT). Moreover, the back gate polarization (BGP) effect, on circuit performance, has been analyzed and a dynamic BGP is proposed which improve rectifier performance.
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