{"title":"Comprehensive investigation on parameter extraction methodology for short channel amorphous-InGaZnO thin-film transistors","authors":"C. Tanaka, K. Ikeda","doi":"10.1109/ICMTS.2018.8383756","DOIUrl":null,"url":null,"abstract":"We proposed a comprehensive parameter extraction method for short channel amorphous InGaZnO (α-InGaZnO) thin-film transistors (TFTs) on the basis of measurement data and TCAD simulations. Single parameter set were successfully extracted for channel length down to 500nm by using RPI α-Si TFT model with channel length modulation modeling. It makes possible to more accurate and scalable circuit performance characterization, since the extracted parameters correspond to the physical behavior of α-InGaZnO TFTs.","PeriodicalId":271839,"journal":{"name":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","volume":"178 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Microelectronic Test Structures (ICMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2018.8383756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We proposed a comprehensive parameter extraction method for short channel amorphous InGaZnO (α-InGaZnO) thin-film transistors (TFTs) on the basis of measurement data and TCAD simulations. Single parameter set were successfully extracted for channel length down to 500nm by using RPI α-Si TFT model with channel length modulation modeling. It makes possible to more accurate and scalable circuit performance characterization, since the extracted parameters correspond to the physical behavior of α-InGaZnO TFTs.
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