G. Stillman, N. Gardner, Q. Hartmann, S. A. Stockman, J. Baker
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引用次数: 0
Abstract
Recently we have demonstrated the growth of epitaxial layers of highly resistive InP (/spl rho//spl ges/10/sup 9/ /spl Omega/ cm) by low-pressure MOCVD at low substrate temperature (<550/spl deg/C) using a CCl/sub 4/ doping source. The effect of substrate temperature and CCl/sub 4/ flow rate on the electrical properties of this material have been studied, and the results indicate that the SI behavior is most likely due to CCl/sub 4/-mediated enhancement of native defect incorporation during growth. Device results show that SI InP grown with a CCl/sub 4/ doping source is suitable for application as a Schottky-barrier-enhancement layer on n-In/sub 0.53/Ga/sub 0.47/As.
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