{"title":"Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs","authors":"M. Reshchikov, A. Gutkin, V. Sedov","doi":"10.1109/SIM.1996.571103","DOIUrl":null,"url":null,"abstract":"We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy V/sub As/V/sub Ga/. An alignment of the Jahn-Teller distortions has been found for these complexes.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.571103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy V/sub As/V/sub Ga/. An alignment of the Jahn-Teller distortions has been found for these complexes.
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