H. Leipner, C. Hubner, O. Storbeck, A. Polity, R. Krause-Rehberg
The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.
{"title":"Defect characterization in plastically deformed gallium arsenide","authors":"H. Leipner, C. Hubner, O. Storbeck, A. Polity, R. Krause-Rehberg","doi":"10.1109/SIM.1996.571100","DOIUrl":"https://doi.org/10.1109/SIM.1996.571100","url":null,"abstract":"The defect spectrum in plastically deformed GaAs is analyzed by positron lifetime measurements. Different types of defects, such as vacancy clusters or antisites, are identified and their thermal annealing behavior is studied.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132000574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy V/sub As/V/sub Ga/. An alignment of the Jahn-Teller distortions has been found for these complexes.
{"title":"Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs","authors":"M. Reshchikov, A. Gutkin, V. Sedov","doi":"10.1109/SIM.1996.571103","DOIUrl":"https://doi.org/10.1109/SIM.1996.571103","url":null,"abstract":"We investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy V/sub As/V/sub Ga/. An alignment of the Jahn-Teller distortions has been found for these complexes.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124702399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
F. Edelman, Y. Komem, M. Stolzer, P. Werner, R. Butz
Amorphous (a) Si{sub 1{minus}x}Ge{sub x} films with x = 0.27--0.55 about 200--300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO{sub 2}/Si(001) substrates at room temperature. For crystallization at 600 to 900 C a-Si{sub 1{minus}x}Ge{sub x}/SiO{sub 2}/Si samples were annealed in vacuum at 10{sup {minus}6} Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si{sub 1{minus}x}Ge{sub x} films with grain size of about 5--20 nm which is 100 times smaller than undoped films. The nanocrystalline Si{sub 1{minus}x}Ge{sub x} films showed a high hole mobility (1 to 100 cm{sup 2}/Vs) and Seebeck coefficient values (5 to 110 {micro}V/K).
{"title":"Nanocrystalline SiGe films: structure and properties","authors":"F. Edelman, Y. Komem, M. Stolzer, P. Werner, R. Butz","doi":"10.1109/SIM.1996.570940","DOIUrl":"https://doi.org/10.1109/SIM.1996.570940","url":null,"abstract":"Amorphous (a) Si{sub 1{minus}x}Ge{sub x} films with x = 0.27--0.55 about 200--300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO{sub 2}/Si(001) substrates at room temperature. For crystallization at 600 to 900 C a-Si{sub 1{minus}x}Ge{sub x}/SiO{sub 2}/Si samples were annealed in vacuum at 10{sup {minus}6} Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si{sub 1{minus}x}Ge{sub x} films with grain size of about 5--20 nm which is 100 times smaller than undoped films. The nanocrystalline Si{sub 1{minus}x}Ge{sub x} films showed a high hole mobility (1 to 100 cm{sup 2}/Vs) and Seebeck coefficient values (5 to 110 {micro}V/K).","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124969604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Kruger, Yan Chin Shih, Liu Xiao, C.L. Wang, J. Morse, M. Rogalla, K. Runge, E. Weber
Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs.
{"title":"The influence of native point defects on the performance of diodes built on neutron-irradiated semi-insulating GaAs","authors":"J. Kruger, Yan Chin Shih, Liu Xiao, C.L. Wang, J. Morse, M. Rogalla, K. Runge, E. Weber","doi":"10.1109/SIM.1996.571116","DOIUrl":"https://doi.org/10.1109/SIM.1996.571116","url":null,"abstract":"Irradiation of semi-insulating GaAs by fast neutrons results in the creation of arsenic antisite defects. Photoresponse measurements reveal that the carrier lifetime is reduced by the irradiation. The lifetimes scale inversely with the amount of singly ionized arsenic antisites which therefore is the main carrier trapping center and lifetime killer in irradiated GaAs. The density of charged arsenic antisites also determines the charge collection efficiency of Schottky diodes made of GaAs.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116970036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Spectroscopic Ellipsometry (SE) and Grazing X-ray Reflectance (GXR) techniques are applied on a III-V periodic epitaxial structures in order to extract accurately structural informations. Thickness informations are obtained directly from Fourier transformation of the GXR spectra and confirmed by simulation of the reflectance curve. Compositions are deduced from SE regression using GXR thickness as input values. Using this method it was possible to detect g reduction of the density of the top layers. This layer imperfection is important to deduce accurate reflectance properties for the same structure.
{"title":"Characterization of III-V periodic structures by spectroscopic ellipsometry and grazing X-ray reflectance","authors":"P. Boher, J. Stehle","doi":"10.1109/SIM.1996.570936","DOIUrl":"https://doi.org/10.1109/SIM.1996.570936","url":null,"abstract":"Spectroscopic Ellipsometry (SE) and Grazing X-ray Reflectance (GXR) techniques are applied on a III-V periodic epitaxial structures in order to extract accurately structural informations. Thickness informations are obtained directly from Fourier transformation of the GXR spectra and confirmed by simulation of the reflectance curve. Compositions are deduced from SE regression using GXR thickness as input values. Using this method it was possible to detect g reduction of the density of the top layers. This layer imperfection is important to deduce accurate reflectance properties for the same structure.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127060593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Under standard MBE growth conditions, a series of electron traps is concentrated near the inverted. GaAs/AlAs interface (GaAs grown on top of AlAs). These levels have been identified as being due to native point defects on the AlAs side of the heterointerface. The particular influence of As/sub 4/ flux, growth temperature, and growth rate is examined with respect to the intrinsic levels at the inverted GaAs/AlAs interface. It is shown that the structural and compositional perfection of the inverted interface is strongly affected by excess arsenic during growth. Moreover, it is found that the accumulation of the dominant, arsenic vacancy-related defect on the AlAs side of the inverted interface is neither influenced by the As/sub 4/ flux, nor by the growth rate.
{"title":"Influence of MBE growth conditions on deep electronic states at the inverted GaAs/AlAs interface","authors":"P. Krispin, R. Hey, H. Kostial","doi":"10.1109/SIM.1996.571101","DOIUrl":"https://doi.org/10.1109/SIM.1996.571101","url":null,"abstract":"Under standard MBE growth conditions, a series of electron traps is concentrated near the inverted. GaAs/AlAs interface (GaAs grown on top of AlAs). These levels have been identified as being due to native point defects on the AlAs side of the heterointerface. The particular influence of As/sub 4/ flux, growth temperature, and growth rate is examined with respect to the intrinsic levels at the inverted GaAs/AlAs interface. It is shown that the structural and compositional perfection of the inverted interface is strongly affected by excess arsenic during growth. Moreover, it is found that the accumulation of the dominant, arsenic vacancy-related defect on the AlAs side of the inverted interface is neither influenced by the As/sub 4/ flux, nor by the growth rate.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126760714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The Fe/sub In/ trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material.
{"title":"A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing","authors":"K. Cherkaoui, S. Kallel, G. Marrakchi, A. Karoui","doi":"10.1109/SIM.1996.570878","DOIUrl":"https://doi.org/10.1109/SIM.1996.570878","url":null,"abstract":"Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The Fe/sub In/ trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129132406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Conventional and high resolution electron microscopy has been applied to study defects in both epitaxial and bulk GaN of wurtzite structure. Because of different growth conditions, epitaxial and bulk GaN crystalline materials differ in their defect structures. While stacking faults and dislocation loops associated with precipitates are typically observed in bulk GaN, dislocations are the major defect found in epitaxial GaN layers. Formation of stacking faults is equivalent to a wurtzite-zincblende structural transformation within a few basal planes and, hence, to a local change in symmetry.
{"title":"Structural defects in GaN","authors":"S. Ruvimov, Z. Liliental-Weber","doi":"10.1109/SIM.1996.570885","DOIUrl":"https://doi.org/10.1109/SIM.1996.570885","url":null,"abstract":"Conventional and high resolution electron microscopy has been applied to study defects in both epitaxial and bulk GaN of wurtzite structure. Because of different growth conditions, epitaxial and bulk GaN crystalline materials differ in their defect structures. While stacking faults and dislocation loops associated with precipitates are typically observed in bulk GaN, dislocations are the major defect found in epitaxial GaN layers. Formation of stacking faults is equivalent to a wurtzite-zincblende structural transformation within a few basal planes and, hence, to a local change in symmetry.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123597190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The interaction between EL5 and EL6 was studied by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Anomalous filling time dependence of CCVTS peak heights for two trap components of EL5 and EL6 was observed in a long range filling pulse duration. The decrement of one EL6 constituent was nearly equal to the increment of one EL5 constituent. This variation could be reversed by controlling electron occupation fractions of these traps. The calculation by rate equations based on a bistable reaction model could explain well such characteristic behaviors.
{"title":"Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs","authors":"H. Shiraki, Y. Tokuda, K. Sassa","doi":"10.1109/SIM.1996.571104","DOIUrl":"https://doi.org/10.1109/SIM.1996.571104","url":null,"abstract":"The interaction between EL5 and EL6 was studied by using isothermal constant-capacitance voltage transient spectroscopy (CCVTS). Anomalous filling time dependence of CCVTS peak heights for two trap components of EL5 and EL6 was observed in a long range filling pulse duration. The decrement of one EL6 constituent was nearly equal to the increment of one EL5 constituent. This variation could be reversed by controlling electron occupation fractions of these traps. The calculation by rate equations based on a bistable reaction model could explain well such characteristic behaviors.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126525577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Muller, D. Hofmann, E. Mokhov, M. Ramm, A. Roenkov, Y. Vodakov, A. Winnacker
Cathodoluminescence-mapping experiments of n- and p-type 6H SiC intentionally doped with vanadium (V) show a local anti-correlation of the V/sup 4+/ related IR-luminescence and the near bandedge donor-acceptor pair luminescence (N/spl rarr/Al). This fact indicates, that V acts as minority carrier lifetime determining impurity. The suppression of the V/sup 4+/ luminescence near crystallographic defects is discussed under the possible mechanism of V precipitate formation. The binding-energy of the V/sup 4+/5+/ donor level is determined to E/sub v/+1.57/spl plusmn/0.05 eV by photoluminescence excitation measurements.
{"title":"Electronic and optical properties of vanadium doped silicon carbide crystals grown by the sublimation sandwich method","authors":"S. Muller, D. Hofmann, E. Mokhov, M. Ramm, A. Roenkov, Y. Vodakov, A. Winnacker","doi":"10.1109/SIM.1996.570943","DOIUrl":"https://doi.org/10.1109/SIM.1996.570943","url":null,"abstract":"Cathodoluminescence-mapping experiments of n- and p-type 6H SiC intentionally doped with vanadium (V) show a local anti-correlation of the V/sup 4+/ related IR-luminescence and the near bandedge donor-acceptor pair luminescence (N/spl rarr/Al). This fact indicates, that V acts as minority carrier lifetime determining impurity. The suppression of the V/sup 4+/ luminescence near crystallographic defects is discussed under the possible mechanism of V precipitate formation. The binding-energy of the V/sup 4+/5+/ donor level is determined to E/sub v/+1.57/spl plusmn/0.05 eV by photoluminescence excitation measurements.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128167586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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