{"title":"Comparison of refractory metal and silicide capping effects on aluminum metallizations","authors":"T. Kikkawa, N. Endo, T. Yamazaki, H. Watanabe","doi":"10.1109/VMIC.1989.78038","DOIUrl":null,"url":null,"abstract":"The effects of various refractory metal and silicide capping layers on aluminum metallizations are investigated. Ti-Al, Mo-Al, Ta-Al, WSi/sub 2/-Al, and MoSi/sub 2/-Al layered structures are compared in terms of electromigration and stress-induced voiding. The authors have found that the Ti-Al layered structure can suppress stress-induced void formation in underlying Al conductors. The effect of the Ti-Al layered structure on the suppression of stress-induced voiding can be attributed to the formation of the intermetallic compound Al/sub 3/Ti, which prevents plastic deformation of the film. Electromigration results indicate that the capping layers of refractory metals and silicides such as Ti, W, WSi/sub 2/, and MoSi/sub 2/ improve the mean time to failure by 4-10 times compared with Al without capping.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78038","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
The effects of various refractory metal and silicide capping layers on aluminum metallizations are investigated. Ti-Al, Mo-Al, Ta-Al, WSi/sub 2/-Al, and MoSi/sub 2/-Al layered structures are compared in terms of electromigration and stress-induced voiding. The authors have found that the Ti-Al layered structure can suppress stress-induced void formation in underlying Al conductors. The effect of the Ti-Al layered structure on the suppression of stress-induced voiding can be attributed to the formation of the intermetallic compound Al/sub 3/Ti, which prevents plastic deformation of the film. Electromigration results indicate that the capping layers of refractory metals and silicides such as Ti, W, WSi/sub 2/, and MoSi/sub 2/ improve the mean time to failure by 4-10 times compared with Al without capping.<>
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