{"title":"TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells","authors":"J. Zou, D. Cai, D. Cockayne, S. Yuan, C. Jagadish","doi":"10.1109/COMMAD.1998.791662","DOIUrl":null,"url":null,"abstract":"In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791662","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.
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