TEM measurement of Al profiles in interdiffused GaAs/AlGaAs quantum-wells

J. Zou, D. Cai, D. Cockayne, S. Yuan, C. Jagadish
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Abstract

In this paper, we demonstrate the application of thickness fringe imaging technique to determine the quantum well profile in an interdiffused GaAsAl/GaAs quantum well heterostructure.
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互扩散GaAs/AlGaAs量子阱中Al谱的透射电镜测量
在本文中,我们展示了厚度条纹成像技术在确定互扩散GaAsAl/GaAs量子阱异质结构中量子阱剖面的应用。
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