SOI for MEMS and advanced packaging

J. Muldavin, C. Bozler, D. Yost, C. Chen, P. Wyatt
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引用次数: 2

Abstract

Silicon on Insulator (SOI) Technologies offer many advantages for the fabrication and advanced packaging of MEMS and IC devices and systems. The buried oxide provides an excellent etch stop and the silicon layers on top can be selected for the exact thickness, crystal orientation, and purity for the required application. These properties are exploited for the fabrication and packaging of MEMS devices as well as for 3D integration of SOI CMOS and flexible electronics. Particular examples from work done at MIT Lincoln Laboratory over the last 10 years will be included.
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用于MEMS和先进封装的SOI
绝缘体上硅(SOI)技术为MEMS和IC器件和系统的制造和先进封装提供了许多优势。埋藏的氧化物提供了一个优秀的蚀刻停止和硅层的顶部可以选择精确的厚度,晶体取向,和纯度为所需的应用。这些特性可用于MEMS器件的制造和封装,以及SOI CMOS和柔性电子器件的3D集成。麻省理工学院林肯实验室在过去十年中所做的一些特别的例子也会包括在内。
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