S. Sawada, K. Oida, H. Miyajima, K. Nambu, R. Nakai, M. Tatsumi, K. Fujita, Y. Nishida
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引用次数: 1
Abstract
This paper presents prospects for the future market, availability and cost of 6 in. diam. GaAs substrates from a substrate supplier's point of view. Outlining the challenges to the substrate supplier, we discuss the current issues and the future potential of production technologies (crystal growth, annealing, and wafer processing) for 6 in. diam. GaAs substrates, and mention current issues for 3 in. diam. InP substrates. In addition, we introduce 6 in. diam. GaAs and 3 in. diam. InP crystals grown by the VCZ method, which is a promising technology for the production of large substrates for multimedia devices.
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