{"title":"Reliable contact metallization technology with Al-Si-Cu/TiN/Ti system for CMOS VLSIs","authors":"Y. Ohshima, S. Mori, K. Yoshikawa","doi":"10.1109/VMIC.1989.78012","DOIUrl":null,"url":null,"abstract":"An anomalous p/sup +/ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p/sup +/ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An anomalous p/sup +/ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p/sup +/ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability.<>
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