P. Martín-Holgado, M. Maestro-Izquierdo, M. B. González, Y. Morilla, F. Campabadal
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引用次数: 0
Abstract
The effect of gamma-ray irradiation on HfO2-based memristors is investigated. Extensive electrical characterization of their resistive switching performance and assessment of data retention under irradiation indicate that the devices are resilient to radiation damage.
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