F. Karouta, P. Vreugdewater, B. Jacobs, B.H. van Roy, O. Schoen, H. Protzmann, M. Heuken
{"title":"Progress in reactive ion etching of epitaxial GaN","authors":"F. Karouta, P. Vreugdewater, B. Jacobs, B.H. van Roy, O. Schoen, H. Protzmann, M. Heuken","doi":"10.1109/COMMAD.1998.791612","DOIUrl":null,"url":null,"abstract":"Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl/sub 4/, Ar and SF/sub 6/. Plasma deposited SiN/sub x/ is used for masking. We studied the influence of gas flow, pressure and RF-power on etch rate and morphology. High etch rates up to 150 nm/min can be obtained when using SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm) at an acceleration voltage of 370 Volts. Very smooth surfaces and good etch rates (/spl plusmn/100 nm/min) were obtained using the same chemistry at a lower RF-power of 105 Watts (DC-bias of /spl plusmn/290 V).","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791612","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Reactive Ion Etching (RIE) of GaN epitaxially grown on (0001) sapphire substrate has been investigated using various chemistries based on SiCl/sub 4/, Ar and SF/sub 6/. Plasma deposited SiN/sub x/ is used for masking. We studied the influence of gas flow, pressure and RF-power on etch rate and morphology. High etch rates up to 150 nm/min can be obtained when using SIC/sub 4/:Ar:SF/sub 6/ (10:10:2 sccm) at an acceleration voltage of 370 Volts. Very smooth surfaces and good etch rates (/spl plusmn/100 nm/min) were obtained using the same chemistry at a lower RF-power of 105 Watts (DC-bias of /spl plusmn/290 V).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
