{"title":"SIMOX and VLSI high speed and rad hard applications: discussion of floating body effects and circuits optimization","authors":"A. Auberton-Herve","doi":"10.1109/SOI.1988.95427","DOIUrl":null,"url":null,"abstract":"Some results obtained in a CMOS prototype line environment are reported to show the compatibility of SIMOX (separation by implantation of oxygen) technology with industrial applications. The main parameters of devices and circuits optimization are analyzed in terms of VLSI applications. New floating-body effects and solutions to improve the SOI performances are discussed. High-speed and radiation-hard technologies are examined.<<ETX>>","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SOS/SOI Technology Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1988.95427","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
Some results obtained in a CMOS prototype line environment are reported to show the compatibility of SIMOX (separation by implantation of oxygen) technology with industrial applications. The main parameters of devices and circuits optimization are analyzed in terms of VLSI applications. New floating-body effects and solutions to improve the SOI performances are discussed. High-speed and radiation-hard technologies are examined.<>
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