A. Chin, H.J. Yang, S.H. Lin, C. Liao, W. Chen, F. Yeh
{"title":"Improved high temperature retention and endurance in HfON trapping memory with double quantum barriers","authors":"A. Chin, H.J. Yang, S.H. Lin, C. Liao, W. Chen, F. Yeh","doi":"10.1109/ICSICT.2008.4734666","DOIUrl":null,"url":null,"abstract":"We have compared the device performance of double-quantum-barrier charge-trapping memory of a TaN/Ir<sub>3</sub>Si-[HfAlO-LaAlO<sub>3</sub>]-HfON<sub>0.2</sub>-[HfAlO-SiO<sub>2</sub>]-Si device with single barrier non-volatile memory MONOS devices at close EOT. At 150°C under fast 100 ¿s and low ±9 V P/E, the double-quantum-barrier charge-trapping device shows a 3.2 V initial ¿V<sub>th</sub> and 2.7 V 10-year extrapolated retention. This retention decay rate is much improved from single barrier device.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734666","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have compared the device performance of double-quantum-barrier charge-trapping memory of a TaN/Ir3Si-[HfAlO-LaAlO3]-HfON0.2-[HfAlO-SiO2]-Si device with single barrier non-volatile memory MONOS devices at close EOT. At 150°C under fast 100 ¿s and low ±9 V P/E, the double-quantum-barrier charge-trapping device shows a 3.2 V initial ¿Vth and 2.7 V 10-year extrapolated retention. This retention decay rate is much improved from single barrier device.
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