Inversion electron effective mobility in SOI NMOSFETs

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344567

M. Sherony, L. T. Su, J. E. Chung, D. Antoniadis

引用次数: 1

Abstract

Due to reported advantages over bulk silicon, thin-film SOI has developed the potential of becoming a mainstream digital technology. In order to accurately model SOI device operation, it is necessary to understand further the channel electron mobility behavior. Some work has been done in characterising the electron mobility in SOI devices and an enhanced mobility effect has been reported by several authors for fully-depleted devices. In these works, the mobility was found to increase for thinner films and this mobility enhancement has been attributed to a decreased vertical electric field in the channel. For the same gate drive, (V/sub gs/-V/sub th/), the thinner fully-depleted SOI device has a reduced transverse field and thus a higher mobility. This work examines the effective mobility (/spl mu//sub eff/) as a function of a transverse effective electric field (E/sub eff/) rather than gate voltage or gate drive.<>

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SOI nmosfet的反转电子有效迁移率

由于有报道称薄膜SOI优于块状硅，因此有可能成为主流数字技术。为了准确地模拟SOI器件的工作，有必要进一步了解通道电子迁移行为。在表征SOI器件中的电子迁移率方面已经做了一些工作，并且有几位作者报道了完全耗尽器件的增强迁移率效应。在这些工作中，发现薄膜越薄，迁移率越高，这种迁移率的增强归因于通道中垂直电场的减少。对于相同的栅极驱动器(V/sub gs/-V/sub th/)，更薄的完全耗尽SOI器件具有更小的横向场，因此具有更高的迁移率。这项工作考察了有效迁移率(/spl mu//sub eff/)作为横向有效电场(E/sub eff/)的函数，而不是栅极电压或栅极驱动。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1993 IEEE International SOI Conference

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