Isothermal Non-Linear Device Characterization

Abstract

Semiconductor device characterization is traditionally focused on the measurement of the DC and AC characteristics. In view of this, there is a lack of characterization methods supporting the overall qualification of the device (non-) linearity for various bias conditions. One way to study the device linearity is to create constant OIP3 contours in the I(V) output plane. Using this data representation, insight is gained about the device linearity under various bias conditions. This is useful in circuit design, as well as for model verification. In order to avoid thermal effects, this type of data is preferably measured under isothermal (pulsed) conditions. Based on these considerations we have developed a nonlinear RF characterization system for the isothermal measurement of spectral components. In this work we give an overview of the measurement system setup together with some initial results.