Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327501
G. Vandersteen, P. Wambacq, S. Donnay, F. Verbeyst
Designing complex analog systems needs different abstraction levels to reduce the overall complexity. The required level of abstraction depends on the accuracy and the purpose of the model. High-frequency amplifier models can vary from simple transfer functions for efficient bit-error-rate analysis up to detailed transistor level descriptions for accurate load-pull prediction. This paper introduces a nonlinear black-box model for high-frequency amplifiers. It extends the linear S-parameter representation to enable both efficient system-level simulations and load-pull prediction. Both are demonstrated on the measurements of a high-frequency amplifier excited using a WLAN - OFDM modulation.
{"title":"High-frequency nonlinear amplifier model for the efficient evaluation of inband distortion under nonlinear load-pull conditions","authors":"G. Vandersteen, P. Wambacq, S. Donnay, F. Verbeyst","doi":"10.1109/ARFTG.2001.327501","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327501","url":null,"abstract":"Designing complex analog systems needs different abstraction levels to reduce the overall complexity. The required level of abstraction depends on the accuracy and the purpose of the model. High-frequency amplifier models can vary from simple transfer functions for efficient bit-error-rate analysis up to detailed transistor level descriptions for accurate load-pull prediction. This paper introduces a nonlinear black-box model for high-frequency amplifiers. It extends the linear S-parameter representation to enable both efficient system-level simulations and load-pull prediction. Both are demonstrated on the measurements of a high-frequency amplifier excited using a WLAN - OFDM modulation.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123346371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327495
F. Verbeyst, E. Vandamme
This article explains the rationale of performing ¿large-signal network analysis¿ and the basic concepts involved. The focus is on the measurement technology required to perform fully calibrated measurements on nonlinear devices in a versatile environment (different bias, source and load mismatch conditions, continuous wave or modulation). Furthermore this technology is compared to existing approaches. Finally a readily available measurement system is described, which represents the latest developments from Agilent Technologies in the domain of large-signal network analysis.
{"title":"Large-Signal Network Analysis. Overview of the measurement capabilities of a Large-Signal Network Analyzer","authors":"F. Verbeyst, E. Vandamme","doi":"10.1109/ARFTG.2001.327495","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327495","url":null,"abstract":"This article explains the rationale of performing ¿large-signal network analysis¿ and the basic concepts involved. The focus is on the measurement technology required to perform fully calibrated measurements on nonlinear devices in a versatile environment (different bias, source and load mismatch conditions, continuous wave or modulation). Furthermore this technology is compared to existing approaches. Finally a readily available measurement system is described, which represents the latest developments from Agilent Technologies in the domain of large-signal network analysis.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124000686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327484
J. Jargon, K. Gupta, D. Schreurs, K. Remley, D. DeGroot
We describe a method of generating models for nonlinear devices and circuits, based upon measurements of travelling-wave voltages at a periodic large-signal excitation and its harmonics using a nonlinear vector network analyzer. Utilizing a second source, we use multiple measurements of a nonlinear circuit to train artificial neural network models that yield portable, nonlinear large-signal scattering parameters. We obtain an independent check by comparing an example diode-circuit model generated by means of this methodology with a harmonic-balance simulation.
{"title":"A Method of Developing Frequency-Domain Models for Nonlinear Circuits Based on Large-Signal Measurements","authors":"J. Jargon, K. Gupta, D. Schreurs, K. Remley, D. DeGroot","doi":"10.1109/ARFTG.2001.327484","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327484","url":null,"abstract":"We describe a method of generating models for nonlinear devices and circuits, based upon measurements of travelling-wave voltages at a periodic large-signal excitation and its harmonics using a nonlinear vector network analyzer. Utilizing a second source, we use multiple measurements of a nonlinear circuit to train artificial neural network models that yield portable, nonlinear large-signal scattering parameters. We obtain an independent check by comparing an example diode-circuit model generated by means of this methodology with a harmonic-balance simulation.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130287681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327502
P. Crama, J. Schoukens
Wiener-Hammerstein systems consist of a linear dynamic system followed by a static nonlinearity, followed by another linear dynamic system. These models are difficult to identify due to the presence of two dynamic systems whose contributions to the system behaviour aren¿t easily separable. Usually, a nonlinear estimation procedure is used to estimate the parameters of the different parts. This nonlinear estimation procedure needs good starting values to converge quickly and/or reliably to a global minimum. This paper proposes a method to compute a first estimate based on one measurement record only.
{"title":"Wiener-Hammerstein System Estimator Initialisation Using a Random Multisine Excitation","authors":"P. Crama, J. Schoukens","doi":"10.1109/ARFTG.2001.327502","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327502","url":null,"abstract":"Wiener-Hammerstein systems consist of a linear dynamic system followed by a static nonlinearity, followed by another linear dynamic system. These models are difficult to identify due to the presence of two dynamic systems whose contributions to the system behaviour aren¿t easily separable. Usually, a nonlinear estimation procedure is used to estimate the parameters of the different parts. This nonlinear estimation procedure needs good starting values to converge quickly and/or reliably to a global minimum. This paper proposes a method to compute a first estimate based on one measurement record only.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130925448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327493
V. Cuoco, M. D. de Kok, M. Heijden, L. D. de Vreede
Semiconductor device characterization is traditionally focused on the measurement of the DC and AC characteristics. In view of this, there is a lack of characterization methods supporting the overall qualification of the device (non-) linearity for various bias conditions. One way to study the device linearity is to create constant OIP3 contours in the I(V) output plane. Using this data representation, insight is gained about the device linearity under various bias conditions. This is useful in circuit design, as well as for model verification. In order to avoid thermal effects, this type of data is preferably measured under isothermal (pulsed) conditions. Based on these considerations we have developed a nonlinear RF characterization system for the isothermal measurement of spectral components. In this work we give an overview of the measurement system setup together with some initial results.
{"title":"Isothermal Non-Linear Device Characterization","authors":"V. Cuoco, M. D. de Kok, M. Heijden, L. D. de Vreede","doi":"10.1109/ARFTG.2001.327493","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327493","url":null,"abstract":"Semiconductor device characterization is traditionally focused on the measurement of the DC and AC characteristics. In view of this, there is a lack of characterization methods supporting the overall qualification of the device (non-) linearity for various bias conditions. One way to study the device linearity is to create constant OIP3 contours in the I(V) output plane. Using this data representation, insight is gained about the device linearity under various bias conditions. This is useful in circuit design, as well as for model verification. In order to avoid thermal effects, this type of data is preferably measured under isothermal (pulsed) conditions. Based on these considerations we have developed a nonlinear RF characterization system for the isothermal measurement of spectral components. In this work we give an overview of the measurement system setup together with some initial results.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121259485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327497
Bumman Kim, Youngoo Yang, J. Cha, Y. Woo, Jaehyok Yi
We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the down-converted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.
{"title":"Measurement of Memory Effect of High-Power Si LDMOSFET Amplifier Using Two-tone Phase Evaluation","authors":"Bumman Kim, Youngoo Yang, J. Cha, Y. Woo, Jaehyok Yi","doi":"10.1109/ARFTG.2001.327497","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327497","url":null,"abstract":"We present a simple and straightforward method to accurately measure the relative phases of the fundamental and intermodulation components for a high power amplifier. The measurement is based on the cancellation between the low frequency signals from the down-converted amplifier output and reference signal generator. The cancellation principle, deembedding technique of the delay mismatch between the two path, and the accuracy and dynamic range for the measurements are also analyzed.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128017848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327490
J. R. Loo-Yau, R. Infante-Galindo, J. Reynoso‐Hernández
This work deals with a nonlinear model for the gate-source capacitance CGS (VGS, VDS) and gate-drain capacitance CGD (VGS, VDS) of GaAs MESFET, HEMT and PHEMT transistors. An analytical bias dependent expression for modeling the CGS (VGS, VDS) and CGD (VGS, VDS) capacitances is developed. The CGS (VGS, VDS) and CGD (VGS, VDS) experimental values are obtained using a multibias extraction of the small signal equivalent circuit procedure. Good agreement between modeled and experimental data, as a function of gate-source and drain-source bias, is obtained. The main feature of the proposed nonlinear model is that no optimization is needed to achieve a good fit of modeled to experimental data.
{"title":"A New Empirical Gate Capacitance Model for PHEMT and MESFET Transistors","authors":"J. R. Loo-Yau, R. Infante-Galindo, J. Reynoso‐Hernández","doi":"10.1109/ARFTG.2001.327490","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327490","url":null,"abstract":"This work deals with a nonlinear model for the gate-source capacitance CGS (VGS, VDS) and gate-drain capacitance CGD (VGS, VDS) of GaAs MESFET, HEMT and PHEMT transistors. An analytical bias dependent expression for modeling the CGS (VGS, VDS) and CGD (VGS, VDS) capacitances is developed. The CGS (VGS, VDS) and CGD (VGS, VDS) experimental values are obtained using a multibias extraction of the small signal equivalent circuit procedure. Good agreement between modeled and experimental data, as a function of gate-source and drain-source bias, is obtained. The main feature of the proposed nonlinear model is that no optimization is needed to achieve a good fit of modeled to experimental data.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133558831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327498
D. Schreurs, E. Vandamme, S. Vandenberghe
The trend towards system-on-chip realisation tightens the design specifications and consequently imposes high accuracy requirements on device models. This paper presents an overview of the surplus value of using vectorial large-signal measurements to validate the large-signal accuracy of RF MOSFET models. We show that these models can be evaluated at operating conditions close to real applications, such as intermodulation characterisation combined with loadpull. The large-signal model verification is not limited to analogue applications, because also the RF large-signal performance of digital circuits, such as inverters, can be examined. In this paper, we focus to the results obtained for the BSIM3v3 compact model and for the in-house developed large-signal look-up table model.
{"title":"Capabilities of Vectorial Large-Signal Measurements to Validate RF Large-Signal Device Models","authors":"D. Schreurs, E. Vandamme, S. Vandenberghe","doi":"10.1109/ARFTG.2001.327498","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327498","url":null,"abstract":"The trend towards system-on-chip realisation tightens the design specifications and consequently imposes high accuracy requirements on device models. This paper presents an overview of the surplus value of using vectorial large-signal measurements to validate the large-signal accuracy of RF MOSFET models. We show that these models can be evaluated at operating conditions close to real applications, such as intermodulation characterisation combined with loadpull. The large-signal model verification is not limited to analogue applications, because also the RF large-signal performance of digital circuits, such as inverters, can be examined. In this paper, we focus to the results obtained for the BSIM3v3 compact model and for the in-house developed large-signal look-up table model.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121506687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327481
Christopher P. Silva, A. Moulthrop, M. Muha
The requirements/environments for broadband commercial and military communication systems have focused attention on the issues of efficiency and nonlinearity characterization of power amplifiers, and the mitigation of the distortion they produce. Common system modeling approaches, which are dominated by probing signals of at most a multi-tone nature, prove to be inadequate for representing channels with operational bandwidths reaching the multi-GHz range. This shortfall in modeling fidelity is especially the case for higher-order, non-constant envelope modulations that are often needed to meet bandwidth efficiency demands. As a natural consequence, distortion compensation designs based on these models will likewise prove to be less than optimal in their effectiveness. This paper introduces an established nonlinear system identification technique from the mechanical systems field that essentially solves the wideband modeling problem, and in addition provides very unique assessment and design tools for distortion compensation. The technique is a special case of a formal operator series representation for the given nonlinearity with memory, and its construction is based on an extremely accurate baseband time-domain measurement technique¿using pseudo-randomly modulated signals ¿ that will also be described. The basic modeling and compensation features of the method will then be provided, followed by two representative high-power amplifier (HPA) applications to illustrate and validate the modeling method. The fidelity evaluation will be performed in the time-domain using a normalized mean-square error (NMSE) waveform metric, and compared with results found for standard block model approaches.
{"title":"Introduction to Polyspectral Modeling and Compensation Techniques for Wideband Communications Systems","authors":"Christopher P. Silva, A. Moulthrop, M. Muha","doi":"10.1109/ARFTG.2001.327481","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327481","url":null,"abstract":"The requirements/environments for broadband commercial and military communication systems have focused attention on the issues of efficiency and nonlinearity characterization of power amplifiers, and the mitigation of the distortion they produce. Common system modeling approaches, which are dominated by probing signals of at most a multi-tone nature, prove to be inadequate for representing channels with operational bandwidths reaching the multi-GHz range. This shortfall in modeling fidelity is especially the case for higher-order, non-constant envelope modulations that are often needed to meet bandwidth efficiency demands. As a natural consequence, distortion compensation designs based on these models will likewise prove to be less than optimal in their effectiveness. This paper introduces an established nonlinear system identification technique from the mechanical systems field that essentially solves the wideband modeling problem, and in addition provides very unique assessment and design tools for distortion compensation. The technique is a special case of a formal operator series representation for the given nonlinearity with memory, and its construction is based on an extremely accurate baseband time-domain measurement technique¿using pseudo-randomly modulated signals ¿ that will also be described. The basic modeling and compensation features of the method will then be provided, followed by two representative high-power amplifier (HPA) applications to illustrate and validate the modeling method. The fidelity evaluation will be performed in the time-domain using a normalized mean-square error (NMSE) waveform metric, and compared with results found for standard block model approaches.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130442570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-11-01DOI: 10.1109/ARFTG.2001.327488
A. Safwat, L. Hayden
We investigate the sensitivity of SOLT and LRRM on wafer calibrations to probe positioning. Calibration comparison derived error-bounds were calculated for data sets differing only by a single change in probe/standard overlap. The SOLT calibration was found to be significantly more sensitive to probe placement variations, consistent with theoretical predictions.
{"title":"Sensitivity Analysis of Calibration Standards for SOLT and LRRM","authors":"A. Safwat, L. Hayden","doi":"10.1109/ARFTG.2001.327488","DOIUrl":"https://doi.org/10.1109/ARFTG.2001.327488","url":null,"abstract":"We investigate the sensitivity of SOLT and LRRM on wafer calibrations to probe positioning. Calibration comparison derived error-bounds were calculated for data sets differing only by a single change in probe/standard overlap. The SOLT calibration was found to be significantly more sensitive to probe placement variations, consistent with theoretical predictions.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125799534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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