Experimental evidence of giant fluctuations in the electrical response of very thin SnO/sub 2/ films

C. Cobianu, M. Mihaila, L. Bocioaca, D. Lungu, C. Savaniu, A. Arnautu, R. Iorgulescu
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Abstract

A simple comb structure provided with p/sup +/ silicon temperature sensor and Al electrodes predeposited on Si/SiO/sub 2/ substrates has been used to study the room temperature time-dependent voltage response of undoped and Sb doped SnO/sub 2/ sol-gel derived thin films as a function of injected constant current. Giant voltage fluctuations were revealed for input currents higher than a certain threshold that varied as a function of film technology and surface topography. The results were qualitatively interpreted in terms biased percolation model.
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极薄SnO/ sub2 /薄膜电响应巨大波动的实验证据
采用p/sup +/硅温度传感器和预镀在Si/SiO/sub - 2/衬底上的Al电极的简单梳状结构,研究了未掺杂和掺Sb的SnO/sub - 2/溶胶-凝胶衍生薄膜的室温时电压响应随注入恒电流的变化。当输入电流高于某一阈值时,电压波动会随着薄膜技术和表面形貌的变化而变化。结果用偏渗模型进行了定性解释。
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