Wavelength selective wide bandgap II-VI detectors

M. Ehinger, M. Korn, T. Schallenberg, W. Faschinger, G. Landwehr
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Abstract

In modern technology there is a growing demand for wavelength selective, highly sensitive detectors in the visible spectral range, especially for short wavelengths. II-VI wide gap PIN photodiodes have been fabricated using ZnMgSSe and ZnSTe heterostructures grown by molecular beam epitaxy (MBE). These diodes have excellent structural and interface quality and a high external quantum efficiency (QE) of up to 60%, which is dose to the theoretical limit. Devices which use a p-type layer as a "built in band edge filter" for wavelengths shorter than the energy gap have a spectral response with a full width at half maximum (FWHM) down to 6.5 nn and a QE of 10%. The shape of the spectral response and the stray signal rejection is comparable to metal-dielectric type bandpass filters with an optical density of 4 for the ultraviolet. Due to the high external QE and a low dark current below 0.1 pA/mm/sup 2/, II-VI wide gap hetero PIN photodiodes surpass UV optimized Si detectors and filter detector combinations with bandwidths between 20 nm and 80 nm in detectivity in the UV spectral range.
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波长选择性宽带隙II-VI探测器
在现代技术中,对可见光谱范围内波长选择性高灵敏度的探测器,特别是短波长的需求日益增长。利用分子束外延(MBE)生长的ZnMgSSe和ZnSTe异质结构制备了II-VI型宽间隙PIN光电二极管。这些二极管具有优良的结构和界面质量,并且具有高达60%的高外量子效率(QE),这是剂量到理论极限。对于短于能隙的波长,使用p型层作为“内置带边滤波器”的器件,其半最大值全宽度(FWHM)的光谱响应降至6.5 nn, QE为10%。光谱响应的形状和杂散信号抑制可与金属介电型带通滤波器相媲美,其紫外光密度为4。由于高外部QE和低于0.1 pA/mm/sup 2/的低暗电流,II-VI宽间隙异质PIN光电二极管在紫外光谱范围内的探测率超过了带宽在20 nm至80 nm之间的紫外优化Si探测器和滤波探测器组合。
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