L. Artola, T. Chiarella, T. Nuns, G. Cussac, J. Mitard
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引用次数: 1
Abstract
This work presents the TID evaluation of iN14 technology developed by IMEC under gamma irradiations. The impacts of TID on electrical characteristics and on the transistor-to-transistor variability are presented for nFinFET for several gate lengths.
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