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2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)最新文献

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SEL and TID Characterization of a CAES QCOTS 512Gb NAND Flash Nonvolatile Memory for Space Applications 用于空间应用的CAES QCOTS 512Gb NAND非易失性存储器的SEL和TID特性
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679329
M. Von Thun, P. Nelson, A. Turnbull, B. Baranski
Single Event Latch-up (SEL) and Total Ionizing Dose (TID) radiation characterization was performed on a CAES quantified-off-the-shelf (QCOTS) 512Gb 3D NAND flash memory. The device was shown to be suitable for space applications.
在CAES定量现货(QCOTS) 512Gb 3D NAND闪存上进行了单事件锁存(SEL)和总电离剂量(TID)辐射表征。该装置已证明适合于空间应用。
{"title":"SEL and TID Characterization of a CAES QCOTS 512Gb NAND Flash Nonvolatile Memory for Space Applications","authors":"M. Von Thun, P. Nelson, A. Turnbull, B. Baranski","doi":"10.1109/NSREC45046.2021.9679329","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679329","url":null,"abstract":"Single Event Latch-up (SEL) and Total Ionizing Dose (TID) radiation characterization was performed on a CAES quantified-off-the-shelf (QCOTS) 512Gb 3D NAND flash memory. The device was shown to be suitable for space applications.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126626220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Low-Cost High Precision 2D Beam Scanning Device Based on a Consumer 3D Printer 一种基于消费级3D打印机的低成本高精度二维光束扫描装置
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679331
E. Cascio, B. Gottschalk
We describe a very low-cost high precision 2D beam scanning system, based on a consumer 3D printer, that is suitable for radiation beam size and uniformity quality assurance measurements.
我们描述了一种非常低成本的高精度二维光束扫描系统,该系统基于消费者3D打印机,适用于辐射光束尺寸和均匀性质量保证测量。
{"title":"A Low-Cost High Precision 2D Beam Scanning Device Based on a Consumer 3D Printer","authors":"E. Cascio, B. Gottschalk","doi":"10.1109/NSREC45046.2021.9679331","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679331","url":null,"abstract":"We describe a very low-cost high precision 2D beam scanning system, based on a consumer 3D printer, that is suitable for radiation beam size and uniformity quality assurance measurements.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122102475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavy Ion Induced Single Event Effects Characterization of the XQE-0920 Commercial Off-the-shelf CMOS Photonic Imager Microcircuit XQE-0920商用现货CMOS光子成像仪微电路的重离子诱导单事件效应表征
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679348
R. Koga, S. Davis, A. Berman, D. Mabry
We present observations of heavy ion induced single event effects on the XQE-0920 CMOS imager microcircuit. Pixel upsets as well as upsets accompanying a high level of bias current were observed.
我们在XQE-0920 CMOS成像仪微电路上观察到重离子诱导的单事件效应。观察到像素扰动以及伴随高偏置电流的扰动。
{"title":"Heavy Ion Induced Single Event Effects Characterization of the XQE-0920 Commercial Off-the-shelf CMOS Photonic Imager Microcircuit","authors":"R. Koga, S. Davis, A. Berman, D. Mabry","doi":"10.1109/NSREC45046.2021.9679348","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679348","url":null,"abstract":"We present observations of heavy ion induced single event effects on the XQE-0920 CMOS imager microcircuit. Pixel upsets as well as upsets accompanying a high level of bias current were observed.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"19 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126108100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
[Copyright notice] (版权)
Pub Date : 2021-07-01 DOI: 10.1109/nsrec45046.2021.9679323
{"title":"[Copyright notice]","authors":"","doi":"10.1109/nsrec45046.2021.9679323","DOIUrl":"https://doi.org/10.1109/nsrec45046.2021.9679323","url":null,"abstract":"","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131662257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total Dose Performance at High and Low Dose Rate of a CMOS, Low Dropout Voltage Regulator showing Enhanced Low Dose Rate Sensitivity 高剂量率和低剂量率下CMOS低差稳压器的总剂量性能,显示增强的低剂量率灵敏度
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679352
D. Hiemstra, S. Shi, Z. Yang, L. Chen
Results of Cobalt-60 irradiation of a CMOS low dropout voltage regulator at high and low dose rate are, presented. Hardness assurance implications due to observation of ELDRS for analog CMOS microcircuits are, discussed.
介绍了CMOS低差稳压器在高剂量率和低剂量率下的钴-60辐照结果。讨论了模拟CMOS微电路中ELDRS观测对硬度保证的影响。
{"title":"Total Dose Performance at High and Low Dose Rate of a CMOS, Low Dropout Voltage Regulator showing Enhanced Low Dose Rate Sensitivity","authors":"D. Hiemstra, S. Shi, Z. Yang, L. Chen","doi":"10.1109/NSREC45046.2021.9679352","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679352","url":null,"abstract":"Results of Cobalt-60 irradiation of a CMOS low dropout voltage regulator at high and low dose rate are, presented. Hardness assurance implications due to observation of ELDRS for analog CMOS microcircuits are, discussed.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116021206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Ionizing Dose and Single Event Effects Test Results of Texas Instruments LMK04832-SP (5962R1722701 VXC) 3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs 美国德州仪器LMK04832-SP (5962R1722701 VXC) 3.2 GHz JESD204B时钟抖动清洁器14个输出的总电离剂量和单事件效应测试结果
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679340
K. Kruckmeyer, T. Trinh, Heriberto Castro, Aaron Black, Vibhu Vanjari, R. Gooty, Samantha Williams, Derek Payne
The LMK04832-SP is a JESD204B compliant clock conditioner with integrated VCOs that can provide clock signals up to 3.2 GHz on up to 14 outputs. The device was tested for ELDRS and SEE and shown to be ELDRS-free, rated to 100 krad(Si) for low dose rate environments and SEL and SEFI immune. ELDRS, RLAT, MAAT, SEL, SEFI and SEU data are presented.
LMK04832-SP是一款符合JESD204B标准的时钟调节器,集成了vco,可以在多达14个输出上提供高达3.2 GHz的时钟信号。该装置进行了ELDRS和SEE测试,结果显示无ELDRS,在低剂量率环境下额定为100 krad(Si),具有SEL和SEFI免疫。给出了ELDRS、RLAT、MAAT、SEL、SEFI和SEU数据。
{"title":"Total Ionizing Dose and Single Event Effects Test Results of Texas Instruments LMK04832-SP (5962R1722701 VXC) 3.2 GHz JESD204B Clock Jitter Cleaner with 14 Outputs","authors":"K. Kruckmeyer, T. Trinh, Heriberto Castro, Aaron Black, Vibhu Vanjari, R. Gooty, Samantha Williams, Derek Payne","doi":"10.1109/NSREC45046.2021.9679340","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679340","url":null,"abstract":"The LMK04832-SP is a JESD204B compliant clock conditioner with integrated VCOs that can provide clock signals up to 3.2 GHz on up to 14 outputs. The device was tested for ELDRS and SEE and shown to be ELDRS-free, rated to 100 krad(Si) for low dose rate environments and SEL and SEFI immune. ELDRS, RLAT, MAAT, SEL, SEFI and SEU data are presented.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132173302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SEE and TID Evaluation of the ADC ADS8350 Using Proton Irradiation 质子辐照对ADC ADS8350的SEE和TID评价
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679334
S. Shi, D. Hiemstra, Z. Yang, L. Chen
The susceptibility to both SEE and TID of the ADS8350 was tested using 105 MeV protons. No SEE was observed while the device failed at a TID of 25 krad (Si).
采用105mev质子测试了ADS8350对SEE和TID的敏感性。当器件在25 krad (Si)时失效时,未观察到SEE。
{"title":"SEE and TID Evaluation of the ADC ADS8350 Using Proton Irradiation","authors":"S. Shi, D. Hiemstra, Z. Yang, L. Chen","doi":"10.1109/NSREC45046.2021.9679334","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679334","url":null,"abstract":"The susceptibility to both SEE and TID of the ADS8350 was tested using 105 MeV protons. No SEE was observed while the device failed at a TID of 25 krad (Si).","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"2014 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121560958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavy Ion Single Event Effects (SEE) results for OPA128 Electrometer Grade Operational Amplifier 重离子单事件效应(SEE)对OPA128静电计级运算放大器的影响
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679341
S. L. Katz, J. Likar, Chi H. Pham, Dakai Chen, Natnael J. Ahmed
The OPA128 is an electrometer grade operational amplifier with femtoamp bias currents [1], potentially offering better performance than other rad-hard precision op amps available today [2], [3], [4], [5], [6]. Heavy ion testing to qualify it for use on the Europa Clipper mission uncovered a destructive failure not noted in prior testing [7], [8], [9], precipitating additional testing to explore the failure and determine the part's viability for spaceflight. Testing yielded a proposed safe operating area (SOA). Non-destructive transient events were also observed and characterized for multiple applications.
OPA128是静电计级运算放大器,具有飞安偏置电流[1],可能比目前可用的其他radhard精密运算放大器[2],[3],[4],[5],[6]提供更好的性能。为使其符合欧罗巴快船任务的使用条件而进行的重离子测试发现了先前测试[7]、[8]、[9]中未注意到的破坏性故障,促使进行了进一步的测试,以探索该故障并确定该部件在太空飞行中的可行性。测试产生了一个建议的安全操作区域(SOA)。非破坏性瞬态事件也被观察和表征为多种应用。
{"title":"Heavy Ion Single Event Effects (SEE) results for OPA128 Electrometer Grade Operational Amplifier","authors":"S. L. Katz, J. Likar, Chi H. Pham, Dakai Chen, Natnael J. Ahmed","doi":"10.1109/NSREC45046.2021.9679341","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679341","url":null,"abstract":"The OPA128 is an electrometer grade operational amplifier with femtoamp bias currents [1], potentially offering better performance than other rad-hard precision op amps available today [2], [3], [4], [5], [6]. Heavy ion testing to qualify it for use on the Europa Clipper mission uncovered a destructive failure not noted in prior testing [7], [8], [9], precipitating additional testing to explore the failure and determine the part's viability for spaceflight. Testing yielded a proposed safe operating area (SOA). Non-destructive transient events were also observed and characterized for multiple applications.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128491769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Total Ionizing Dose Effects ofn-FinFET Transistor in iN14 Technology iN14技术中n- finfet晶体管的总电离剂量效应
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679337
L. Artola, T. Chiarella, T. Nuns, G. Cussac, J. Mitard
This work presents the TID evaluation of iN14 technology developed by IMEC under gamma irradiations. The impacts of TID on electrical characteristics and on the transistor-to-transistor variability are presented for nFinFET for several gate lengths.
本文介绍了IMEC开发的iN14技术在γ辐照下的TID评价。讨论了不同栅极长度下的栅极效应晶体管的电特性和晶体管间可变性。
{"title":"Total Ionizing Dose Effects ofn-FinFET Transistor in iN14 Technology","authors":"L. Artola, T. Chiarella, T. Nuns, G. Cussac, J. Mitard","doi":"10.1109/NSREC45046.2021.9679337","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679337","url":null,"abstract":"This work presents the TID evaluation of iN14 technology developed by IMEC under gamma irradiations. The impacts of TID on electrical characteristics and on the transistor-to-transistor variability are presented for nFinFET for several gate lengths.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121366867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Total Ionizing Dose and Heavy Ion Irradiation Test Results of $mu text{Module}$ Regulators $ text{Module}$调节器的总电离剂量和重离子辐照试验结果
Pub Date : 2021-07-01 DOI: 10.1109/NSREC45046.2021.9679328
B. Vermeire, D. L. Hansen
Total ionizing dose and heavy ion radiation test results are provided or two commercial $mu text{Module}$ regulators that have no comparable space-qualified equivalents. Results suggest that these parts may not be suitable for most missions.
提供了总电离剂量和重离子辐射测试结果,或两个没有可比较的空间合格等效调节器的商业调节器。结果表明,这些部分可能不适合大多数任务。
{"title":"Total Ionizing Dose and Heavy Ion Irradiation Test Results of $mu text{Module}$ Regulators","authors":"B. Vermeire, D. L. Hansen","doi":"10.1109/NSREC45046.2021.9679328","DOIUrl":"https://doi.org/10.1109/NSREC45046.2021.9679328","url":null,"abstract":"Total ionizing dose and heavy ion radiation test results are provided or two commercial $mu text{Module}$ regulators that have no comparable space-qualified equivalents. Results suggest that these parts may not be suitable for most missions.","PeriodicalId":340911,"journal":{"name":"2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132016969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)
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