S.D. Colgate, G.J. Palenik, V. E. House, D. Schoenfeld, C. Simon
{"title":"Area selective gold MOCVD for VLSI electronics","authors":"S.D. Colgate, G.J. Palenik, V. E. House, D. Schoenfeld, C. Simon","doi":"10.1109/VMIC.1989.78052","DOIUrl":null,"url":null,"abstract":"Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-AA-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500 degrees C) to an ambient of (C/sub 2/H/sub 5/)/sub 3/PAuCl vapor for 1 h.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. Area-selective metal-organic chemical vapor deposition (MOCVD) of gold thin films has been achieved on tungsten patterned on VLSI-type silicon wafers. Scanning Auger spectroscopy of the wafer deposition areas displays virtual exclusion of gold deposits on silicious regions with 4000-AA-thick gold films of high feature resolution covering the tungsten patterns. The films were deposited by exposing the heated wafer (T<500 degrees C) to an ambient of (C/sub 2/H/sub 5/)/sub 3/PAuCl vapor for 1 h.<>
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