Neuron MOS technique designed 8 channels Winner Takes it All integrated circuit

D. Dobrescu, R. Comanescu, L. Dobrescu
{"title":"Neuron MOS technique designed 8 channels Winner Takes it All integrated circuit","authors":"D. Dobrescu, R. Comanescu, L. Dobrescu","doi":"10.1109/SMICND.1998.733815","DOIUrl":null,"url":null,"abstract":"This paper presents a novel design for a Winner Takes it All integrated circuit implemented in a 0.8 microns neuron MOS technology. The circuit design emphasis is on simplicity and compactness. It contains only 11 neuron MOS circuits and 18 MOS transistors. The paper contains the description and the layout of the WTA circuit as well as some component blocks.","PeriodicalId":406922,"journal":{"name":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1998.733815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper presents a novel design for a Winner Takes it All integrated circuit implemented in a 0.8 microns neuron MOS technology. The circuit design emphasis is on simplicity and compactness. It contains only 11 neuron MOS circuits and 18 MOS transistors. The paper contains the description and the layout of the WTA circuit as well as some component blocks.
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神经元MOS技术设计了8通道赢家通吃集成电路
提出了一种基于0.8微米神经元MOS技术的赢家通吃集成电路的新设计。电路设计的重点是简单和紧凑。它只包含11个神经元MOS电路和18个MOS晶体管。文中给出了WTA电路的描述和布局,并给出了部分电路模块。
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