{"title":"High Drive and Low Leakage Current MBC FET with Channel Thickness 1.2nm/0.6nm","authors":"Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, Liwei Liu, Xiang Hou, Huawei Chen, Jiayi Li, Yu-Gang Jiang, David-Wei Zhang, P. Zhou","doi":"10.1109/IEDM13553.2020.9371941","DOIUrl":null,"url":null,"abstract":"We demonstrate a 2-levels-stacked multi-bridge-channels (MBC) FET with channel thickness only 0.6nm and 1.2nm which is the thinnest channel record among reported MBC FET. The normalized drive current of a single stacked channel is 13.2μA•μm/μm (VDS=1V) which is comparable to the latest 7-levels-stacked Si MBC FET. What’s more, this ultrathin MBC FET demonstrates a very low leakage current per level (0.92pA•μm/μm, VDS=1V), only 6.5% of the value of the Si MBC FET. We also explore a self-aligned edge-contact process, paving the way toward higher-levels-stacked ultrathin MBC FET.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
We demonstrate a 2-levels-stacked multi-bridge-channels (MBC) FET with channel thickness only 0.6nm and 1.2nm which is the thinnest channel record among reported MBC FET. The normalized drive current of a single stacked channel is 13.2μA•μm/μm (VDS=1V) which is comparable to the latest 7-levels-stacked Si MBC FET. What’s more, this ultrathin MBC FET demonstrates a very low leakage current per level (0.92pA•μm/μm, VDS=1V), only 6.5% of the value of the Si MBC FET. We also explore a self-aligned edge-contact process, paving the way toward higher-levels-stacked ultrathin MBC FET.
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