Gate Drive Concept for dv/dt Control of GaN GIT-Based Motor Drive Inverters

E. Persson, D. Wilhelm
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引用次数: 4

Abstract

In high-volume applications like home appliance motor drives, system cost and density are key value metrics. In many cases, system packaging puts severe limits on the power dissipation ability of the power electronics, so inverter losses must be kept to a minimum. GaN power transistors can offer significant improvements in power loss compared to IGBT or MOSFET-based inverters [1], [2], but controlling switching speed (dv/dt) can be challenging.This paper proposes a simplified active dv/dt control method that can be integrated into the driver IC and GaN transistor using low-cost techniques without adding passive components or bondwires inside the Integrated Power Module (IPM). The circuit is implemented in a monolithic 3-phase gate driver IC using low-cost 0.35 μm HVJI CMOS process. The package- integrated 3-phase inverter using the IC with 6 discrete GaN GIT is demonstrated to be capable of delivering 226 W from a 12x12 mm package, about double the power delivered by today’s silicon-based inverter in the same package size.The results of simulation and experiment are provided for an integrated IPM driving a motor load up to 226 W.
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基于GaN git的电机驱动逆变器dv/dt控制的栅极驱动概念
在像家用电器电机驱动这样的大批量应用中,系统成本和密度是关键的价值指标。在许多情况下,系统封装对电力电子器件的功耗能力施加了严格的限制,因此逆变器的损耗必须保持在最低限度。与IGBT或基于mosfet的逆变器相比,GaN功率晶体管可以显著改善功率损耗[1],[2],但控制开关速度(dv/dt)可能具有挑战性。本文提出了一种简化的有源dv/dt控制方法,该方法可以使用低成本技术集成到驱动IC和GaN晶体管中,而无需在集成功率模块(IPM)内部添加无源元件或键合线。该电路采用低成本的0.35 μm HVJI CMOS工艺在单片三相栅极驱动IC中实现。采用6分立GaN GIT集成IC的封装集成三相逆变器被证明能够从12x12 mm封装中提供226 W的功率,大约是目前相同封装尺寸的硅基逆变器功率的两倍。仿真和实验结果表明,集成IPM可以驱动高达226 W的电机负载。
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