{"title":"A compact pulse-based charge pump in 0.13 μm CMOS","authors":"J. Holleman, B. Otis, C. Diorio","doi":"10.1109/CICC.2007.4405757","DOIUrl":null,"url":null,"abstract":"In this paper, we present a new class of charge pump capable of generating voltages 3.75 × greater than the supply in a single clock cycle. It occupies .005 mm2 in a 0.13 μm CMOS process and can operate with a supply voltage between 0.4 V and 1.2 V, or as low as 0.2 V with some pulse-shape distortion. Our charge pump can provide output voltages of up to 3.9 V with less than 10 nW of standby power dissipation.","PeriodicalId":130106,"journal":{"name":"2007 IEEE Custom Integrated Circuits Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2007.4405757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
In this paper, we present a new class of charge pump capable of generating voltages 3.75 × greater than the supply in a single clock cycle. It occupies .005 mm2 in a 0.13 μm CMOS process and can operate with a supply voltage between 0.4 V and 1.2 V, or as low as 0.2 V with some pulse-shape distortion. Our charge pump can provide output voltages of up to 3.9 V with less than 10 nW of standby power dissipation.
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