Wideband 1 to 6 GHz Ten and Twenty Watt Balanced GaN HEMT Power Amplifier MMICs

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2011-11-01 DOI:10.1109/CSICS.2011.6062482

J. Komiak, R. Lender, K. Chu, P. Chao

引用次数: 13

Abstract

Design and performance of power amplifiers that have established benchmarks for 1 to 6 GHz power are reported. The 6 mm periphery balanced amplifier achieved a P3dB of 14.5 Watts max, 11.1 Watts average, 8.2 Watts min with 46.1 % max, 31.8 % average, 18.1 % min PAE and 9.6 dB max, 8.5 dB average, 7.5 dB min power gain from 1 to 6 GHz. The 8 mm periphery balanced amplifier achieved a P5dB of 26.7 Watts max, 20.6 Watts average, 13.9 Watts min with 44.4 % max, 30.8 % average, 17.8 % min PAE and 10.6 dB max, 10 dB average, 8.4 dB min power gain from 1 to 7 GHz. This output power, bandwidth, and efficiency is superior to the best previously reported results for both GaN HEMT and PHEMT power amplifiers [1, 2, 3].

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宽带1至6 GHz 10和20瓦平衡GaN HEMT功率放大器mmic

报告了已建立1至6 GHz功率基准的功率放大器的设计和性能。6mm外围平衡放大器在1至6 GHz范围内的P3dB增益为最大14.5瓦、平均11.1瓦、最小8.2瓦，最大PAE增益为46.1%、平均31.8%、最小18.1%，最大功率增益为9.6 dB、平均8.5 dB、最小7.5 dB。8毫米外围平衡放大器在1至7 GHz范围内的P5dB增益为最大26.7瓦，平均20.6瓦，最小13.9瓦，最大44.4%，平均30.8%，最小PAE 17.8%，最大10.6 dB，平均10 dB，最小8.4 dB。这种输出功率、带宽和效率优于先前报道的GaN HEMT和PHEMT功率放大器的最佳结果[1,2,3]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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