Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062492
H. Zirath, Lai Szhau, D. Kuylenstierna, J. Felbinger, K. Andersson, N. Rorsman
An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate
{"title":"An X-Band Low Phase Noise AlGaN-GaN-HEMT MMIC Push-Push Oscillator","authors":"H. Zirath, Lai Szhau, D. Kuylenstierna, J. Felbinger, K. Andersson, N. Rorsman","doi":"10.1109/CSICS.2011.6062492","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062492","url":null,"abstract":"An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116934223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062484
K. Krishnamurthy, J. Martin, D. Aichele, D. Runton
A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 x 2 inch PCB area and uses a novel compact broadband low loss coaxial coiled 1:1 balun to combine two 45 W packaged broadband lossy matched GaN HEMT amplifiers matched to 25 U. The packaged amplifiers contain a GaN on SiC HEMT operating at 50 V drain voltage with integrated passive matching circuitry on GaAs substrate. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.
一个十频宽90 W的GaN HEMT推挽功率放大器已被证明。该功率放大器具有18 dB的小信号增益和20-1100 MHz的3db带宽，在100-1000 MHz频段内可获得82.2-107.5 W的连续输出功率，漏极效率为51.9% - 73.8%，功率增益为15.2-16.3 dB。推挽功率放大器占用2 x 2英寸的PCB面积，并使用新型紧凑型宽带低损耗同轴线圈1:1平衡将两个匹配25 u的45 W封装宽带有损匹配GaN HEMT放大器组合在一起。封装放大器包含工作在50 V漏极电压下的GaN on SiC HEMT，并在GaAs衬底上集成无源匹配电路。这些放大器的目标是用于多频段多标准通信系统和仪器仪表应用。
{"title":"A Decade Bandwidth 90 W GaN HEMT Push-Pull Power Amplifier for VHF / UHF Applications","authors":"K. Krishnamurthy, J. Martin, D. Aichele, D. Runton","doi":"10.1109/CSICS.2011.6062484","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062484","url":null,"abstract":"A decade bandwidth 90 W, GaN HEMT push-pull power amplifier has been demonstrated. The power amplifier exhibits 18 dB small-signal gain with 20-1100 MHz 3-dB bandwidth and obtains 82.2-107.5 W CW output power with 51.9-73.8 % drain efficiency and 15.2-16.3 dB power gain over the 100-1000 MHz band. The push-pull power amplifier occupies a 2 x 2 inch PCB area and uses a novel compact broadband low loss coaxial coiled 1:1 balun to combine two 45 W packaged broadband lossy matched GaN HEMT amplifiers matched to 25 U. The packaged amplifiers contain a GaN on SiC HEMT operating at 50 V drain voltage with integrated passive matching circuitry on GaAs substrate. These amplifiers are targeted for use in multi-band multi-standard communication systems and for instrumentation applications.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130389116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062485
Jonmei J. Yan, C. Hsia, D. Kimball, P. Asbeck
A high efficiency envelope tracking power amplifier which operates over the carrier frequency range of 500 MHz to 1.75 GHz is reported. The amplifier employs a single integrated circuit (IC) GaN RF PA which achieves greater than 12 W output power with greater than 50% drain efficiency under CW excitation. When used in the envelope tracking system with a 6.6 dB PAPR downlink single-carrier WCDMA signal, the GaN PA IC achieves 4 W of output power with 31% system efficiency (RF PA achieved 58.5% drain efficiency) at 752 MHz. Across the frequency range 500 MHz to 1.75 GHz, greater than 2 W with greater than 25% efficiency was demonstrated for the same WCDMA signal using the same configuration and biases for the RFPA and envelope amplifier, without changing impedance matching as the RF center frequency was tuned across the band. To the best of the author's knowledge, this is the first report of an envelope tracking power amplifier operated over carrier frequencies covering more than one octave range.
报道了一种工作在500 MHz ~ 1.75 GHz载波频率范围内的高效包络跟踪功率放大器。该放大器采用单集成电路(IC) GaN RF PA，在连续波激励下输出功率大于12w，漏极效率大于50%。当用于具有6.6 dB PAPR下行单载波WCDMA信号的包络跟踪系统时，GaN PA IC在752 MHz下实现4 W输出功率，系统效率为31% (RF PA实现58.5%漏极效率)。在500 MHz至1.75 GHz的频率范围内，对于相同的WCDMA信号，使用相同的RFPA和包络放大器的配置和偏置，在不改变阻抗匹配的情况下，效率大于2 W，效率大于25%。据作者所知，这是第一份包络跟踪功率放大器在载波频率上运行的报告，覆盖超过一个倍频程范围。
{"title":"GaN Envelope Tracking Power Amplifier with More Than One Octave Carrier Bandwidth","authors":"Jonmei J. Yan, C. Hsia, D. Kimball, P. Asbeck","doi":"10.1109/CSICS.2011.6062485","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062485","url":null,"abstract":"A high efficiency envelope tracking power amplifier which operates over the carrier frequency range of 500 MHz to 1.75 GHz is reported. The amplifier employs a single integrated circuit (IC) GaN RF PA which achieves greater than 12 W output power with greater than 50% drain efficiency under CW excitation. When used in the envelope tracking system with a 6.6 dB PAPR downlink single-carrier WCDMA signal, the GaN PA IC achieves 4 W of output power with 31% system efficiency (RF PA achieved 58.5% drain efficiency) at 752 MHz. Across the frequency range 500 MHz to 1.75 GHz, greater than 2 W with greater than 25% efficiency was demonstrated for the same WCDMA signal using the same configuration and biases for the RFPA and envelope amplifier, without changing impedance matching as the RF center frequency was tuned across the band. To the best of the author's knowledge, this is the first report of an envelope tracking power amplifier operated over carrier frequencies covering more than one octave range.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"338 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115883493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062440
D. Ferenci, M. Grozing, M. Berroth
An analog 2:1 multiplexer for high speed analog multiplexing is presented in InP DHBT technology. The multiplexer features a SNDR above 26 dB with a differential input voltage of 1V-PP and a 3 dB corner frequency above 40GHz. The power consumption of the multiplexer is 1.35W at a supply voltage of 5.5V. The multiplexer is suitable for the realization of a 50GS/s digital-to-analog conversion system, which is more than two times faster than currently available fully sampling rate flexible D/A-conversion systems.
{"title":"A 25 GHz Analog Multiplexer for a 50GS/s D/A-Conversion System in InP DHBT Technology","authors":"D. Ferenci, M. Grozing, M. Berroth","doi":"10.1109/CSICS.2011.6062440","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062440","url":null,"abstract":"An analog 2:1 multiplexer for high speed analog multiplexing is presented in InP DHBT technology. The multiplexer features a SNDR above 26 dB with a differential input voltage of 1V-PP and a 3 dB corner frequency above 40GHz. The power consumption of the multiplexer is 1.35W at a supply voltage of 5.5V. The multiplexer is suitable for the realization of a 50GS/s digital-to-analog conversion system, which is more than two times faster than currently available fully sampling rate flexible D/A-conversion systems.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132302761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062459
T. Kachi, M. Kanechika, T. Uesugi
Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV). The power electronics in the HV/EV system is reviewed. For future development of the HV/EV system, higher performances of the power devices than Si limit, for example, low on-resistance, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Developing GaN power devices are lateral structure and vertical structure. Recent progress of the GaN power devices are also reviewed.
{"title":"Automotive Applications of GaN Power Devices","authors":"T. Kachi, M. Kanechika, T. Uesugi","doi":"10.1109/CSICS.2011.6062459","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062459","url":null,"abstract":"Many power switching devices are used in a hybrid vehicle (HV) and an electric vehicle (EV). The power electronics in the HV/EV system is reviewed. For future development of the HV/EV system, higher performances of the power devices than Si limit, for example, low on-resistance, high operation temperature, are strongly required. GaN power devices are promising candidate for the requirements. Developing GaN power devices are lateral structure and vertical structure. Recent progress of the GaN power devices are also reviewed.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134020673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062487
B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel
In this publication a fully integrated multiprobe reflectometer at 122 GHz is presented. It can be used for readout of resonator-based dielectric sensors for measurement of chemical, biological, or medical liquids. The circuit consists of a voltage-controlled oscillator, an amplitude modulator, a capacitive tapped line, four power detectors, and a dummy sensor. The circuit is operated from a 3.75-V supply and has a power consumption of 319 mW. The readout principle of the circuit is demonstrated by comparing the S-parameters of the dummy sensor to measurements with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.54 mm² .
{"title":"A 122 GHz Multiprobe Reflectometer for Dielectric Sensor Readout in SiGe BiCMOS Technology","authors":"B. Laemmle, K. Schmalz, C. Scheytt, D. Kissinger, R. Weigel","doi":"10.1109/CSICS.2011.6062487","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062487","url":null,"abstract":"In this publication a fully integrated multiprobe reflectometer at 122 GHz is presented. It can be used for readout of resonator-based dielectric sensors for measurement of chemical, biological, or medical liquids. The circuit consists of a voltage-controlled oscillator, an amplitude modulator, a capacitive tapped line, four power detectors, and a dummy sensor. The circuit is operated from a 3.75-V supply and has a power consumption of 319 mW. The readout principle of the circuit is demonstrated by comparing the S-parameters of the dummy sensor to measurements with a commercially available vector network analyzer. The circuit has been fabricated in a 190-GHz SiGe:C BiCMOS technology and occupies an area of 0.54 mm² .","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"203 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124557001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062464
Pen-Jui Peng, Jui-Chih Kao, Huei Wang
Abstract-A vector sum phase shifter (VSPS) using 90 nm CMOS process is presented. The VSPS can synthesize any amplitude and phase at certain frequencies, so the phase and amplitude error can be minimized. The proposed VSPS using a wideband Wilkinson power divider with left-hand transmission line (LHTL)/right-hand transmission line (RHTL) elements to achieve low phase error over a wide bandwidth. The measured RMS phase and amplitude error are under 5.1° and 0.5 dB over 57 -66 GHz, respectively. The average amplitude is about -5 dB. The dc power consumption is less than 15.6 mW (13 mA, 1.2 V). The chip area is 0.315 mm2 without pads. To the authors knowledge, this phase shifter demonstrates the lowest RMS phase and amplitude error over a wide bandwidth among the reported phase shifters around 60 GHz in CMOS processes.
{"title":"A 57-66 GHz Vector Sum Phase Shifter with Low Phase/Amplitude Error Using a Wilkinson Power Divider with LHTL/RHTL Elements","authors":"Pen-Jui Peng, Jui-Chih Kao, Huei Wang","doi":"10.1109/CSICS.2011.6062464","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062464","url":null,"abstract":"Abstract-A vector sum phase shifter (VSPS) using 90 nm CMOS process is presented. The VSPS can synthesize any amplitude and phase at certain frequencies, so the phase and amplitude error can be minimized. The proposed VSPS using a wideband Wilkinson power divider with left-hand transmission line (LHTL)/right-hand transmission line (RHTL) elements to achieve low phase error over a wide bandwidth. The measured RMS phase and amplitude error are under 5.1° and 0.5 dB over 57 -66 GHz, respectively. The average amplitude is about -5 dB. The dc power consumption is less than 15.6 mW (13 mA, 1.2 V). The chip area is 0.315 mm2 without pads. To the authors knowledge, this phase shifter demonstrates the lowest RMS phase and amplitude error over a wide bandwidth among the reported phase shifters around 60 GHz in CMOS processes.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116410434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062435
M. Casbon, P. Tasker, J. Benedikt
It is often desirable to measure device characteristics under non-continuous operation, perhaps to better simulate actual operating conditions, to reduce the thermal loading or to investigate RF operation going beyond the CW safe operating region. In this paper a measurement solution is presented that allows for the concept of experimental RF waveform engineering to be undertaken under such conditions. The system is demonstrated by using it to investigate the feasibility of operating GaAs based HEMT technology under pulsed conditions in high efficiency modes that required high RF voltage swings that extend beyond their rated CW safe operating region.
{"title":"Waveform Engineering beyond the Safe Operating Region: Fully Active Harmonic Load Pull Measurements under Pulsed Conditions","authors":"M. Casbon, P. Tasker, J. Benedikt","doi":"10.1109/CSICS.2011.6062435","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062435","url":null,"abstract":"It is often desirable to measure device characteristics under non-continuous operation, perhaps to better simulate actual operating conditions, to reduce the thermal loading or to investigate RF operation going beyond the CW safe operating region. In this paper a measurement solution is presented that allows for the concept of experimental RF waveform engineering to be undertaken under such conditions. The system is demonstrated by using it to investigate the feasibility of operating GaAs based HEMT technology under pulsed conditions in high efficiency modes that required high RF voltage swings that extend beyond their rated CW safe operating region.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124718925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062436
C. Campbell, D. Dumka, M. Kao, D. Fanning
The design and performance of a high efficiency Ka-band power amplifier MMIC utilizing a 0.15um high voltage GaAs PHEMT process (HV15) is presented. Experimental continuous wave (CW) in-fixture results for the power amplifier MMIC demonstrate up to 5W of saturated output power and 30% associated power added efficiency at 35GHz.
{"title":"High Efficiency Ka-Band Power Amplifier MMIC Utilizing a High Voltage Dual Field Plate GaAs PHEMT Process","authors":"C. Campbell, D. Dumka, M. Kao, D. Fanning","doi":"10.1109/CSICS.2011.6062436","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062436","url":null,"abstract":"The design and performance of a high efficiency Ka-band power amplifier MMIC utilizing a 0.15um high voltage GaAs PHEMT process (HV15) is presented. Experimental continuous wave (CW) in-fixture results for the power amplifier MMIC demonstrate up to 5W of saturated output power and 30% associated power added efficiency at 35GHz.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129638531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-11-01DOI: 10.1109/CSICS.2011.6062480
T. Reed, M. Rodwell, Z. Griffith, P. Rowell, M. Urteaga, M. Field, J. Hacker
We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT technology. Amplifiers reported include designs having 2 and 4 power combined cells. The 4-cell amplifiers exhibited 10 dB small signal gain and 48.8 mW of output power with 4.5 dB gain at 220 GHz. These amplifiers have a 3-dB small signal bandwidth of greater than 48 GHz. A 5-µm thick BCB microstrip wiring environment with 4 levels of interconnects allowed for low-loss transmission lines, mm-wave tuning structures, and dense interconnects within each cell. The 2-cell amplifiers provide 10.9 dB small signal gain at 220 GHz with a 3-dB bandwidth of greater than 42 GHz and 26.3 mW of saturated output power at 208GHz.
{"title":"48.8 mW Multi-Cell InP HBT Amplifier with On-Wafer Power Combining at 220 GHz","authors":"T. Reed, M. Rodwell, Z. Griffith, P. Rowell, M. Urteaga, M. Field, J. Hacker","doi":"10.1109/CSICS.2011.6062480","DOIUrl":"https://doi.org/10.1109/CSICS.2011.6062480","url":null,"abstract":"We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT technology. Amplifiers reported include designs having 2 and 4 power combined cells. The 4-cell amplifiers exhibited 10 dB small signal gain and 48.8 mW of output power with 4.5 dB gain at 220 GHz. These amplifiers have a 3-dB small signal bandwidth of greater than 48 GHz. A 5-µm thick BCB microstrip wiring environment with 4 levels of interconnects allowed for low-loss transmission lines, mm-wave tuning structures, and dense interconnects within each cell. The 2-cell amplifiers provide 10.9 dB small signal gain at 220 GHz with a 3-dB bandwidth of greater than 42 GHz and 26.3 mW of saturated output power at 208GHz.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131296646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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