{"title":"A numerical analysis for heterojunction phototransistor","authors":"J. Chengzhou, Liao Huailin, Li Guohui","doi":"10.1109/ICSICT.1998.785965","DOIUrl":null,"url":null,"abstract":"A punch-through type AlGaAs-GaAs heterojunction phototransistor with a guarding modulation electrode is analyzed by a numerical procedure. The augmented drift-diffusion model is regarded as a suitable model to describe the device, and the coupled equations are solved by the successive line overrelaxation method. The distribution of carriers and electric potential, transportation of non-equilibrium carriers and frequency characteristics are computed systematically. Preliminary results are presented and discussed briefly.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785965","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A punch-through type AlGaAs-GaAs heterojunction phototransistor with a guarding modulation electrode is analyzed by a numerical procedure. The augmented drift-diffusion model is regarded as a suitable model to describe the device, and the coupled equations are solved by the successive line overrelaxation method. The distribution of carriers and electric potential, transportation of non-equilibrium carriers and frequency characteristics are computed systematically. Preliminary results are presented and discussed briefly.
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