H. Stiegler, B. Ashmore, R. Bussey, M. Gill, S. Lin, M. McConnell, D. McElroy, J. Schreck, P. Shah, P. Truong, A. Esquivel, J. Paterson, B. Riemenschneider
{"title":"A 4 Mb 5 V-only flash EEPROM with sector erase","authors":"H. Stiegler, B. Ashmore, R. Bussey, M. Gill, S. Lin, M. McConnell, D. McElroy, J. Schreck, P. Shah, P. Truong, A. Esquivel, J. Paterson, B. Riemenschneider","doi":"10.1109/VLSIC.1990.111116","DOIUrl":null,"url":null,"abstract":"A full 4-Mb flash EEPROM was fabricated in 0.8-μm CMOS and its functionality was verified. Conservative 1.0-μm features were used in the periphery, resulting in a die area of 95 mm2. The device features 5-V-only operation and either full-chip or sector erase. A segmented architecture, remote row decode, and innovative design techniques provide the sector erase feature and high-voltage handling with improved breakdown protection and isolation","PeriodicalId":239990,"journal":{"name":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers., 1990 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1990.111116","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A full 4-Mb flash EEPROM was fabricated in 0.8-μm CMOS and its functionality was verified. Conservative 1.0-μm features were used in the periphery, resulting in a die area of 95 mm2. The device features 5-V-only operation and either full-chip or sector erase. A segmented architecture, remote row decode, and innovative design techniques provide the sector erase feature and high-voltage handling with improved breakdown protection and isolation
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