H. Chuang, C. Uang, S. Cheng, Chun-Yuan Chen, P. Lai, C. Kao, Y. Tsai, W. Hsu, Wen-Chau Liu
{"title":"InGaP/InGaAs dual-channel transistor","authors":"H. Chuang, C. Uang, S. Cheng, Chun-Yuan Chen, P. Lai, C. Kao, Y. Tsai, W. Hsu, Wen-Chau Liu","doi":"10.1109/IWJT.2004.1306790","DOIUrl":null,"url":null,"abstract":"An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual /spl delta/-doped quantum wells as double channels is studied and demonstrated. The employed dual /spl delta/-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1 /spl times/ 100 /spl mu/m device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of f/sub T/ and f/sub max/ are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An interesting InGaP/InGaAs heterostructure field-effect transistor utilizing dual /spl delta/-doped quantum wells as double channels is studied and demonstrated. The employed dual /spl delta/-doped quantum wells and InGaP layer provide good carrier confinement and Schottky behavior, respectively. Good device performances including higher turn-on and breakdown voltages, high and linear transconductance and RF properties are obtained. For a 1 /spl times/ 100 /spl mu/m device, turn-on voltage of 1.74 V, maximum output current of 499 mA/mm, and maximum transconductance of 162 mS/mm with 303 mA/mm broad operation regime are obtained. The microwave properties of f/sub T/ and f/sub max/ are 16 and 32.3 GHz, respectively. Furthermore, even the device is operated at higher temperature regime (>400K), insignificant degradations of DC and RF performances are observed.
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