{"title":"A scalable analytical model for the ESD N-well resistor","authors":"Venugopal Puvvada, Venkatesh Srinivasan, Vishal Gupta","doi":"10.1109/EOSESD.2000.890113","DOIUrl":null,"url":null,"abstract":"We have proposed a simple analytical model for the N-well resistor up to the turnover point in the I-V characteristic of the device. A simple and accurate method of extraction of the parameters used on which this model is based has also been proposed. Furthermore, the scalability of these parameters has also been studied. The model and its scalability have been verified with experimental data.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2000.890113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
We have proposed a simple analytical model for the N-well resistor up to the turnover point in the I-V characteristic of the device. A simple and accurate method of extraction of the parameters used on which this model is based has also been proposed. Furthermore, the scalability of these parameters has also been studied. The model and its scalability have been verified with experimental data.
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