Elimination of kink effect in fully depleted buried channel SOI MOSFET based on silicon direct bonding technology

Abstract

A new SOI fully depleted buried channel MOSFET (FD BCMOS) has been developed which is different from conventional surface buried channel MOS devices in which a pn junction exists at the channel surface. Moreover, the pn junction is totally eliminated in the device structure. Numerical simulation and practical fabrication have demonstrated that no kink effect is seen and the device has excellent performance for VLSI applications due to the absence of the pn junction and superior material quality prepared by silicon wafer direct bonding technology.<>