L. Aina, M. Mattingley, M. Serio, R. Potter, E. Hempfling
{"title":"AlInAs/InP MODFET structures grown by OMVPE","authors":"L. Aina, M. Mattingley, M. Serio, R. Potter, E. Hempfling","doi":"10.1109/ICIPRM.1990.203031","DOIUrl":null,"url":null,"abstract":"The growth of modulation-doped AlInAs/InP heterostructures with two-dimensional electron gases and the fabrication of the first AlInAs/InP HEMT are reported. Hall measurements and Shubnikov-de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, and 2300 cm/sup 2//V-s at 2 K, 77 K, and 300 K respectively, with sheet electron concentrations as high as 1.5*10/sup 12/ cm/sup -2/. AlInAs/InP HEMTs fabricated from this material have extrinsic transconductances as high as 40 mS/mm, gate-drain and drain-source breakdown voltages as high as 20 V, and saturation drain current densities of 0.1 A/mm of gate width. These initial results show that practical microwave power HEMTs can be fabricated from AlInAs/InP heterojunctions.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The growth of modulation-doped AlInAs/InP heterostructures with two-dimensional electron gases and the fabrication of the first AlInAs/InP HEMT are reported. Hall measurements and Shubnikov-de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, and 2300 cm/sup 2//V-s at 2 K, 77 K, and 300 K respectively, with sheet electron concentrations as high as 1.5*10/sup 12/ cm/sup -2/. AlInAs/InP HEMTs fabricated from this material have extrinsic transconductances as high as 40 mS/mm, gate-drain and drain-source breakdown voltages as high as 20 V, and saturation drain current densities of 0.1 A/mm of gate width. These initial results show that practical microwave power HEMTs can be fabricated from AlInAs/InP heterojunctions.<>
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