Large-signal analysis and AC modelling of sub micron resonant tunnelling diodes

Abstract

A large signal measurement set up and analysis technique is developed to characterize and model the dynamic I/V characteristic of a two-terminal double-barrier quantum well structure, the resonant tunnelling diode (RTD). The devices investigated have been realized on InP-substrate using sub-micron process technology in order to minimize power dissipation for high-frequency applications. The process technology applied employs electron beam lithography for precise definition of critical structures and self aligned dry chemical mesa etching. The extraction of device parameters from measurements is presented together with a scaleable large-signal RTD model.