X-band receiver module in fully depleted silicon on insulator technology

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404387

A. Mattamana, K. Groves, P. Orlando, V. Patel, T. Quach, P. Watson, L. Johnson, P. Wyatt, C. Chen, C. Chen, R. Drangmeister, C. Keast

引用次数: 0

Abstract

This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter, and an IF amplifier. The X-band receiver front end module yielded a gain of 13.5-15 dB, 5.2-5.8 dB noise figure (NF), across the frequency band (3.7-4.3 GHz).

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全贫硅绝缘体技术x波段接收器模块

本文报道了在180nm全耗尽(FD) SOI CMOS技术中支持集成宽带/高动态范围x波段接收器的射频(RF)组件的成功演示。所演示的微波单片集成电路(MMIC)包括x波段低噪声放大器(LNA)、马尔尚平衡、平衡放大器、双平衡混频器、非反射滤波器和中频放大器。x波段接收器前端模块在整个频段(3.7-4.3 GHz)的增益为13.5-15 dB，噪声系数(NF)为5.2-5.8 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE International SOI Conference (SOI)

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