K. Inoue, Y. Yamane, K. Shiojima, M. Tokumitsu, F. Hyuga, K. Yamasaki
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引用次数: 2
Abstract
This paper describes the trade-off between breakdown voltage and RF performance of InGaP/InGaAs/GaAs heterostructure MESFETs for power amplifiers and oscillators in multi-function MMICs in the millimeter-wave range. We successfully improved both gate-drain and drain source breakdown voltages while maintaining excellent high-frequency performance by using a double-layered gate consisting of WSiN with different nitrogen contents and by varying epitaxial layer thickness and implantation dose.
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