Records of the 2003 IEEE International Workshop on Memory Technology, Design and Testing

{"title":"Records of the 2003 IEEE International Workshop on Memory Technology, Design and Testing","authors":"","doi":"10.1109/MTDT.2003.1222353","DOIUrl":null,"url":null,"abstract":"The following topics are dealt with: application specific DRAMs; cost optimum embedded DRAM design; memory test generation for DRAM defects; linked faults analysis in RAMs; reducing test time of embedded SRAMs; testability-driven optimizer and wrapper generator for embedded memories; ITRS commodity roadmap; electrical simulation model for the Chalcogenide phase-change memory cell.","PeriodicalId":412381,"journal":{"name":"Records of the 2003 International Workshop on Memory Technology, Design and Testing","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 2003 International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2003.1222353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The following topics are dealt with: application specific DRAMs; cost optimum embedded DRAM design; memory test generation for DRAM defects; linked faults analysis in RAMs; reducing test time of embedded SRAMs; testability-driven optimizer and wrapper generator for embedded memories; ITRS commodity roadmap; electrical simulation model for the Chalcogenide phase-change memory cell.
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2003年IEEE存储器技术、设计和测试国际研讨会记录
处理以下主题:特定应用的dram;成本最优嵌入式DRAM设计;针对DRAM缺陷的存储器测试生成;RAMs中的连断分析;缩短嵌入式ram的测试时间;嵌入式存储器的可测试性驱动优化器和封装器生成器ITRS商品路线图;硫系相变存储电池的电学仿真模型。
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ITRS commodity memory roadmap A testability-driven optimizer and wrapper generator for embedded memories Systematic memory test generation for DRAM defects causing two floating nodes A 40 ns random access time low voltage 2Mbits EEPROM memory for embedded applications Reducing test time of embedded SRAMs
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