{"title":"The use of selective silicide plugs for submicron contact fill","authors":"C. Wei, V. Murali, M. Dass, D. Fraser, J. Borland","doi":"10.1109/VMIC.1989.78016","DOIUrl":null,"url":null,"abstract":"A novel contact fill scheme using a silicide plug has been developed. The scheme combines selective epitaxial Si growth (SEG) and silicide formation to form selective silicide contact plugs. Silicide plugs can be implemented in both n/sup +/ and p/sup +/ contacts with low contact resistance, high temperature stability, and good planarity. TEM and electrical measurements show that the above approach can be used to fill contact depth up to 1 mu m and contact aspect ratio up to 1. The lack of a silicidation stop and the incomplete epi-Si consumption are two issues to be solved. For deeper contacts or contacts with higher aspect ratio, postsilicidation plug implantations become necessary to guarantee low contact resistances.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A novel contact fill scheme using a silicide plug has been developed. The scheme combines selective epitaxial Si growth (SEG) and silicide formation to form selective silicide contact plugs. Silicide plugs can be implemented in both n/sup +/ and p/sup +/ contacts with low contact resistance, high temperature stability, and good planarity. TEM and electrical measurements show that the above approach can be used to fill contact depth up to 1 mu m and contact aspect ratio up to 1. The lack of a silicidation stop and the incomplete epi-Si consumption are two issues to be solved. For deeper contacts or contacts with higher aspect ratio, postsilicidation plug implantations become necessary to guarantee low contact resistances.<>
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