Jin Soo Kim, Jin Hong Lee, S. Hong, W. Han, H. Kwack, D. Oh
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引用次数: 0
Abstract
The introduction of a thin tensile-strained GaAs and In/sub 0.32/ Ga/sub 0.68/As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In/sub 0.32/Ga/sub 0.68/As/InAlGaAs are increased with more isotropic shape.
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