M. Anc, B.F. Cordts, L. Allen, W. Krull, M. Guerra
{"title":"Crystallographic effects in implantation of oxygen for SIMOX","authors":"M. Anc, B.F. Cordts, L. Allen, W. Krull, M. Guerra","doi":"10.1109/SOI.1993.344599","DOIUrl":null,"url":null,"abstract":"In this paper we will discuss aspects of directional or crystallographic effects in implantation of oxygen, with emphasis on the possibility of effects of pinhole formation due to the channeling phenomenon, and application of the intentionally channeled implant to obtain better properties of thin film layers.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this paper we will discuss aspects of directional or crystallographic effects in implantation of oxygen, with emphasis on the possibility of effects of pinhole formation due to the channeling phenomenon, and application of the intentionally channeled implant to obtain better properties of thin film layers.<>
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