W. Kosaka, K. Ogawa, K. Kusaka, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma
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引用次数: 0
Abstract
Rocksalt-structured (RS) Zn-doped MgO films were grown on (100) MgO substrates by the mist chemical vapor deposition method. MgO homoepitaxial film exhibited a near-band-edge (NBE) cathodoluminescence peak at 7.63 eV at 6 K. Zn-doping reduced the MgO NBE emission, and alternatively resulted in observation of NBE at around 7.2 eV as a shoulder. Further increase in Zn precursor source ratio drove observation of predominate NBE emission at 6.3 eV. The results ensure a potential to develop a vacuum UV emitter in 170 nm spectral range.
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