A new characterization of sub-/spl mu/m parallel multilevel interconnects and its experimental verification

K. Aoyama, K. Ise, H. Sato, K. Tsuneno, H. Masuda
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引用次数: 9

Abstract

This paper describes a new interconnect design and its verification with test-structures for sub-micron multilevel interconnection. A universal design-chart has been developed, which gives a precise sub-micron interconnect-capacitance for parallel multilevel interconnections. Test-structure measurements show excellent agreement with the design-chart within 4% error. A simple propagation delay model has also been developed.
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亚/spl μ m级并联多电平互连的新特性及其实验验证
本文介绍了一种新的亚微米级多电平互连设计及其测试结构验证。给出了一种通用设计简图,给出了精确的亚微米级并联多电平互连电容。试验结构测量结果与设计图纸吻合良好,误差在4%以内。本文还建立了一个简单的传输延迟模型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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