{"title":"Identification of process defects using back side emission microscopy","authors":"Chun-Sheng Liu, Charng-E Peng, Chen-Chung Hsu","doi":"10.1109/IPFA.1997.638219","DOIUrl":null,"url":null,"abstract":"As the CMOS is scaling down quickly, the accurate and precise diagnosis of the process failure mechanisms in the ULSI circuits becomes more difficult and time consuming. In this paper, a new failure analysis technique for ULSI process defects using the back side emission microscopy is proposed. The real location of the defect site under the metal layer can be detected exactly by this new technique.","PeriodicalId":159177,"journal":{"name":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.1997.638219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
As the CMOS is scaling down quickly, the accurate and precise diagnosis of the process failure mechanisms in the ULSI circuits becomes more difficult and time consuming. In this paper, a new failure analysis technique for ULSI process defects using the back side emission microscopy is proposed. The real location of the defect site under the metal layer can be detected exactly by this new technique.
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